Abstract

A thin-film monocrystalline CMOS display technology has been realized by implementing a conventional NMOS inversion device and a PMOS accumulation device or PACC. In this paper, a charge-based model is introduced which provides the dc current-voltage characteristics of PACC devices. Derived directly from the Pao–Sah equation by applying the 1D Gauss' law, the model provides a ${\rm C}-\infty$ expression for drain current valid from cutoff through accumulation. The model correctly predicts the influence of fixed charge at the silicon–glass interface on the I–V characteristics and shows excellent agreement for both transfer and output characteristics with results from 2D device simulation. The core model coupled with previously developed equations describing channel length modulation, subthreshold slope degradation, drain induced barrier lowering, and mobility degradation form a complete PACC model which is compared to measured results.

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  1. R. Manley, G. Fenger, K. Hirschman, J. Couillard, C. K. Williams, D. Dawson-Elli, J. Cites, "Demonstration of high performance TFTs on silicon on glass (SiOG) substrate," Proc. SID Dig. (2007) pp. 287-289.
  2. X. Zhouz, K. Chandrasekaran, G. See, Z. Zhu, G. Lim, S. Lin, C. Wei, S. Chiah, M. Cheng, S. Chu, L. Hsia, "Towards unification of MOS compact models with the unified regional approach," Proc. 8th ICSICT (2006) pp. 1193-1197.
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  4. B. Iniguez, V. Dessard, D. Flandre, B. Gentinne, "A physically-based ${\rm C}\infty$-continuous model for accumulation-mode SOI pMOSFETs," IEEE Trans. Electron Devices 46, 2295-2303 (1999).
  5. K. Su, J. B. Kuo, "Analysis of current conduction in short-channel accumulation-mode SOI PMOS devices," IEEE Trans. Electron Devices 44, 832-840 (1997).
  6. Z. Zhengfan, L. Zhaoji, T. Kaizhou, Z. Jiabin, "Subthreshold characteristic of double-gate accumulation-mode SOI PMOSFET," Proc.Int. Symp. Microw., Antenna, Propag. EMC Technol. Wireless Commun. (2007) pp. 1446-1449.
  7. J. Colinge, D. Flandre, F. Van de Wiele, "Subthreshold slope of long-channel accumulation-mode p-channel SOI MOSFETS," Solid State Electron. 37, 289-294 (1994).
  8. Y. Taur, X. Liang, W. Wang, H. Lu, "A continuous, analytic draincurrent model for DG MOSFETs," IEEE Electron Device Lett. 25, 107-109 (2004).
  9. A. Ortiz-Conde, F. Garcia Sanchez, J. Muci, "Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs," Solid State Electron. 49, 640-647 (2005).
  10. F. Liu, J. He, J. Zhang, Y. Chen, M. Chan, "A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes," IEEE Trans. Electron Devices 55, 3494-3502 (2008).
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  12. H. Pao, C. Sah, "Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors," Solid State Electron. 9, 927-937 (1966).
  13. J. He, J. Xi, M. Chan, H. Wan, M. Dunga, B. Heydari, A. Niknejad, C. Hu, "Charge-based core and the model architecture of BSIM5," ISQED 2005. Sixth Int. Symp. on Quality of Electron. Des. (2005) pp. 96-101.
  14. Maxima.sourceforge.netMaxima, a Computer Algebra System 5.18.1 (2009) http://maxima.sourceforge.net/.
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  17. R. Corless, D. Jeffery, D. Knuth, "On the Lambert W function," Adv. Comput. Math. 5, 329-359 (1996).

2009

C. Nassar, C. K. Williams, D. Dawson-Elli, R. Bowman, "Single fermi level, Thin film CMOS on glass: The behavior of enhancement mode PMOSFETs from cutoff through accumulation," IEEE Trans. Electron Devices (2009).

2008

F. Liu, J. He, J. Zhang, Y. Chen, M. Chan, "A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes," IEEE Trans. Electron Devices 55, 3494-3502 (2008).

2005

A. Ortiz-Conde, F. Garcia Sanchez, J. Muci, "Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs," Solid State Electron. 49, 640-647 (2005).

2004

Y. Taur, X. Liang, W. Wang, H. Lu, "A continuous, analytic draincurrent model for DG MOSFETs," IEEE Electron Device Lett. 25, 107-109 (2004).

2003

A. Ortiz-Conde, F. J. Garcia Sanchez, M. Guzman, "Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom," Solid-State Electron. 47, 2067-2074 (2003).

1999

B. Iniguez, V. Dessard, D. Flandre, B. Gentinne, "A physically-based ${\rm C}\infty$-continuous model for accumulation-mode SOI pMOSFETs," IEEE Trans. Electron Devices 46, 2295-2303 (1999).

1997

K. Su, J. B. Kuo, "Analysis of current conduction in short-channel accumulation-mode SOI PMOS devices," IEEE Trans. Electron Devices 44, 832-840 (1997).

1996

R. Corless, D. Jeffery, D. Knuth, "On the Lambert W function," Adv. Comput. Math. 5, 329-359 (1996).

1994

J. Colinge, D. Flandre, F. Van de Wiele, "Subthreshold slope of long-channel accumulation-mode p-channel SOI MOSFETS," Solid State Electron. 37, 289-294 (1994).

1990

J. Colinge, "Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs," IEEE Trans. Electron Devices 37, 718-723 (1990).

1966

H. Pao, C. Sah, "Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors," Solid State Electron. 9, 927-937 (1966).

Adv. Comput. Math.

R. Corless, D. Jeffery, D. Knuth, "On the Lambert W function," Adv. Comput. Math. 5, 329-359 (1996).

IEEE Electron Device Lett.

Y. Taur, X. Liang, W. Wang, H. Lu, "A continuous, analytic draincurrent model for DG MOSFETs," IEEE Electron Device Lett. 25, 107-109 (2004).

IEEE Trans. Electron Devices

J. Colinge, "Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs," IEEE Trans. Electron Devices 37, 718-723 (1990).

B. Iniguez, V. Dessard, D. Flandre, B. Gentinne, "A physically-based ${\rm C}\infty$-continuous model for accumulation-mode SOI pMOSFETs," IEEE Trans. Electron Devices 46, 2295-2303 (1999).

K. Su, J. B. Kuo, "Analysis of current conduction in short-channel accumulation-mode SOI PMOS devices," IEEE Trans. Electron Devices 44, 832-840 (1997).

C. Nassar, C. K. Williams, D. Dawson-Elli, R. Bowman, "Single fermi level, Thin film CMOS on glass: The behavior of enhancement mode PMOSFETs from cutoff through accumulation," IEEE Trans. Electron Devices (2009).

IEEE Trans. Electron Devices

F. Liu, J. He, J. Zhang, Y. Chen, M. Chan, "A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes," IEEE Trans. Electron Devices 55, 3494-3502 (2008).

Solid State Electron.

J. Colinge, D. Flandre, F. Van de Wiele, "Subthreshold slope of long-channel accumulation-mode p-channel SOI MOSFETS," Solid State Electron. 37, 289-294 (1994).

H. Pao, C. Sah, "Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors," Solid State Electron. 9, 927-937 (1966).

A. Ortiz-Conde, F. Garcia Sanchez, J. Muci, "Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs," Solid State Electron. 49, 640-647 (2005).

Solid-State Electron.

A. Ortiz-Conde, F. J. Garcia Sanchez, M. Guzman, "Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom," Solid-State Electron. 47, 2067-2074 (2003).

Other

J. He, J. Xi, M. Chan, H. Wan, M. Dunga, B. Heydari, A. Niknejad, C. Hu, "Charge-based core and the model architecture of BSIM5," ISQED 2005. Sixth Int. Symp. on Quality of Electron. Des. (2005) pp. 96-101.

Maxima.sourceforge.netMaxima, a Computer Algebra System 5.18.1 (2009) http://maxima.sourceforge.net/.

Mathematica 7.0Wolfram Research, Inc.ChampaignIL (2008).

R. Manley, G. Fenger, K. Hirschman, J. Couillard, C. K. Williams, D. Dawson-Elli, J. Cites, "Demonstration of high performance TFTs on silicon on glass (SiOG) substrate," Proc. SID Dig. (2007) pp. 287-289.

X. Zhouz, K. Chandrasekaran, G. See, Z. Zhu, G. Lim, S. Lin, C. Wei, S. Chiah, M. Cheng, S. Chu, L. Hsia, "Towards unification of MOS compact models with the unified regional approach," Proc. 8th ICSICT (2006) pp. 1193-1197.

Z. Zhengfan, L. Zhaoji, T. Kaizhou, Z. Jiabin, "Subthreshold characteristic of double-gate accumulation-mode SOI PMOSFET," Proc.Int. Symp. Microw., Antenna, Propag. EMC Technol. Wireless Commun. (2007) pp. 1446-1449.

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