Abstract
In this paper, the design and implementation of a second-order low-pass filter
(LPF) utilizing an amorphous-silicon (a-Si) thin-film-transistor (TFT) process
technology is presented. In order to boost the gain of the amplifiers, a
positive-feedback technique is developed for the design of a differential operational
amplifier (OPAMP) and a differential-difference amplifier (DDA). Based on the Sallen-Key
filter structure, DDAs with the proposed gain-enhancement technique are employed for the
implementation of the LPF such that the chip area and power consumption can be
minimized. Using an 8-$\mu{\hbox{m}}$ a-Si technology, the DDA and the LPF are realized
for demonstration. Consuming a dc power of 9.5 mW from a 25-V supply, the fabricated LPF
exhibits a 3-dB bandwidth of 0.3 Hz. For an input frequency of 0.3 Hz, the measured THD
and SFDR are ${- 21.66}$ and 23.76 dB, respectively.
© 2010 IEEE
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