Abstract

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{\rm dark})$ is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the $V_{\rm ds}$ and $V_{\rm gs}$ voltages and of light intensities.

© 2009 IEEE

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  1. J. R. Ayres, S. D. Brotherton, I. R. Clarenee, P. J. Dobson, "Photocurrents of poly-Si TFTs," Proc. IEE Circuits Devices Syst. 141, 27-32 (1994).
  2. C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silicon layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).
  3. D. P. Joshi, R. S. Srivastava, "Theoretical study of the photovoltaic properties of polycrystalline silicon," J. Appl. Phys. 89, 2849-2858 (1996).
  4. P. K. Singh, S. N. Singh, R. Kishore, "Modeling and observation of photoconductivity in polycrystalline silicon," J. Appl. Phys. 48, 127-129 (1986).
  5. D. P. Joshi Joshi, R. S. Srivastava, "Carrier mobility in polycrystalline silicon under solar illumination," J. Appl. Phys. 56, 2375-2378 (1984).
  6. C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silico layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).
  7. H. C. Card, "The photoconductivity of the polycrystalline semicoductors," J. Appl. Phys. 52, 3671-3673 (1981).
  8. K. Toda, S. Morita, K. Takahashi, "Crystal-orientation depedence of photoconductivity in Pb2Cr5 thin film," Appl. Phys. A 32, 131-1377 (1987).
  9. P. K. Singh, S. N. Singh, R. Kishore, "Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobility," J. Appl. Phys. 57, 2793-2801 (1985).
  10. A. T. Hatzopoulos, D. H. Tassis, N. A. Hastas, C. A. Dimitriadis, G. Kamarinos, "On-state drain current model of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries," IEEE Trans. Electron Devices 52, 1727-1733 (2005).
  11. H. C. Card, E. S. Yang, "Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices 24, 397-402 (1977).
  12. M. Mitsutoshi, J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase crystallized silicon films," J. Appl. Phys. 86, 5556-5565 (1999).
  13. N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, C. A. Dimitriadis, S. Siskos, "Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region," Microelectronics J. 37, 1313-1320 (2006).
  14. N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, C. A. Dimitriadis, S. Siskos, "Spice model for the simulation of the light impact on the performance of polycrystalline thin-film transistors," Proc. XXI Conf. on Design of Circuits and Integr. Syst., DCIS 06 (2006).
  15. B. Iniguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur, T. Ytterdal, W. Jackson, "Universal compact model for long- and short-channel thin-film transistors," Solid-State Electron. 52, 400-405 (2008).
  16. N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, "New optical feedback pixel driver circuit and its simulation in SPICE," 27th Int. Display Res. Conf. MoscowRussia (2007).

2008 (1)

B. Iniguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur, T. Ytterdal, W. Jackson, "Universal compact model for long- and short-channel thin-film transistors," Solid-State Electron. 52, 400-405 (2008).

2006 (1)

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, C. A. Dimitriadis, S. Siskos, "Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region," Microelectronics J. 37, 1313-1320 (2006).

2005 (1)

A. T. Hatzopoulos, D. H. Tassis, N. A. Hastas, C. A. Dimitriadis, G. Kamarinos, "On-state drain current model of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries," IEEE Trans. Electron Devices 52, 1727-1733 (2005).

1999 (1)

M. Mitsutoshi, J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase crystallized silicon films," J. Appl. Phys. 86, 5556-5565 (1999).

1996 (1)

D. P. Joshi, R. S. Srivastava, "Theoretical study of the photovoltaic properties of polycrystalline silicon," J. Appl. Phys. 89, 2849-2858 (1996).

1994 (1)

J. R. Ayres, S. D. Brotherton, I. R. Clarenee, P. J. Dobson, "Photocurrents of poly-Si TFTs," Proc. IEE Circuits Devices Syst. 141, 27-32 (1994).

1987 (1)

K. Toda, S. Morita, K. Takahashi, "Crystal-orientation depedence of photoconductivity in Pb2Cr5 thin film," Appl. Phys. A 32, 131-1377 (1987).

1986 (3)

C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silico layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).

C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silicon layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).

P. K. Singh, S. N. Singh, R. Kishore, "Modeling and observation of photoconductivity in polycrystalline silicon," J. Appl. Phys. 48, 127-129 (1986).

1985 (1)

P. K. Singh, S. N. Singh, R. Kishore, "Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobility," J. Appl. Phys. 57, 2793-2801 (1985).

1984 (1)

D. P. Joshi Joshi, R. S. Srivastava, "Carrier mobility in polycrystalline silicon under solar illumination," J. Appl. Phys. 56, 2375-2378 (1984).

1981 (1)

H. C. Card, "The photoconductivity of the polycrystalline semicoductors," J. Appl. Phys. 52, 3671-3673 (1981).

1977 (1)

H. C. Card, E. S. Yang, "Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices 24, 397-402 (1977).

Appl. Phys. A (1)

K. Toda, S. Morita, K. Takahashi, "Crystal-orientation depedence of photoconductivity in Pb2Cr5 thin film," Appl. Phys. A 32, 131-1377 (1987).

IEEE Trans. Electron Devices (2)

A. T. Hatzopoulos, D. H. Tassis, N. A. Hastas, C. A. Dimitriadis, G. Kamarinos, "On-state drain current model of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries," IEEE Trans. Electron Devices 52, 1727-1733 (2005).

H. C. Card, E. S. Yang, "Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices 24, 397-402 (1977).

J. Appl. Phys. (8)

M. Mitsutoshi, J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase crystallized silicon films," J. Appl. Phys. 86, 5556-5565 (1999).

C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silicon layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).

D. P. Joshi, R. S. Srivastava, "Theoretical study of the photovoltaic properties of polycrystalline silicon," J. Appl. Phys. 89, 2849-2858 (1996).

P. K. Singh, S. N. Singh, R. Kishore, "Modeling and observation of photoconductivity in polycrystalline silicon," J. Appl. Phys. 48, 127-129 (1986).

D. P. Joshi Joshi, R. S. Srivastava, "Carrier mobility in polycrystalline silicon under solar illumination," J. Appl. Phys. 56, 2375-2378 (1984).

C. A. Dimitriadis, A. Alexandrou, N. A. Economou, "Electrical properties of polycrystalline silico layers under solar illumination," J. Appl. Phys. 60, 3651-3655 (1986).

H. C. Card, "The photoconductivity of the polycrystalline semicoductors," J. Appl. Phys. 52, 3671-3673 (1981).

P. K. Singh, S. N. Singh, R. Kishore, "Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobility," J. Appl. Phys. 57, 2793-2801 (1985).

Microelectronics J. (1)

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, C. A. Dimitriadis, S. Siskos, "Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region," Microelectronics J. 37, 1313-1320 (2006).

Proc. IEE Circuits Devices Syst. (1)

J. R. Ayres, S. D. Brotherton, I. R. Clarenee, P. J. Dobson, "Photocurrents of poly-Si TFTs," Proc. IEE Circuits Devices Syst. 141, 27-32 (1994).

Solid-State Electron. (1)

B. Iniguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur, T. Ytterdal, W. Jackson, "Universal compact model for long- and short-channel thin-film transistors," Solid-State Electron. 52, 400-405 (2008).

Other (2)

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, "New optical feedback pixel driver circuit and its simulation in SPICE," 27th Int. Display Res. Conf. MoscowRussia (2007).

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, C. A. Dimitriadis, S. Siskos, "Spice model for the simulation of the light impact on the performance of polycrystalline thin-film transistors," Proc. XXI Conf. on Design of Circuits and Integr. Syst., DCIS 06 (2006).

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