Abstract
The effects of uniaxial tensile strain on the performance of polycrystalline
silicon thin-film transistors (poly-Si TFTs) is reported. Longitudinal strain
increases the electron mobility and decreases the hole mobility, while transverse
strain decreases the electron mobility and slightly decreases the hole mobility.
Under longitudinal strain the off current decreases for both NMOS and PMOS
TFTs and shifts in threshold voltage and substhreshold slope are observed
for p-channel TFTs. A strong dependence on channel length for both electron
and hole mobilities under longitudinal strain indicates the presence of a
series resistance. For poly-Si TFTs, the mobility changes under strains are
related to the strain effects on single crystalline silicon devices.
© 2009 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription