Abstract

The effects of uniaxial tensile strain on the performance of polycrystalline silicon thin-film transistors (poly-Si TFTs) is reported. Longitudinal strain increases the electron mobility and decreases the hole mobility, while transverse strain decreases the electron mobility and slightly decreases the hole mobility. Under longitudinal strain the off current decreases for both NMOS and PMOS TFTs and shifts in threshold voltage and substhreshold slope are observed for p-channel TFTs. A strong dependence on channel length for both electron and hole mobilities under longitudinal strain indicates the presence of a series resistance. For poly-Si TFTs, the mobility changes under strains are related to the strain effects on single crystalline silicon devices.

© 2009 IEEE

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  1. A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494-1500 (2003).
  2. H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo, "Electrical response of amorphous silicon thin-film transistors under mechanical strain," J. Appl. Phys. 92, 6224-6229 (2002).
  3. S. H. Won, J. K. Chung, C. B. Lee, H. C. Nam, J. H. Hur, J. Jang, "Effect of mechanical and electrical stresses on the performance of an a-Si:H TFT on plastic substrate," J. Electrochem. Soc. 151, G167-G170 (2004).
  4. A. Lochtefeld, I. J. Djomehri, G. Samudra, D. A. Antoniadis, "New insights into carrier transport in n-MOSFETs," IBM J. Res. & Develop. 46, 347-357 (2002).
  5. K. Y. Chan, E. Bunte, H. Stiebig, D. Knipp, "Contact effects in high mobility microcrystalline silicon thin-film transistor," Mater. Res. Soc. Symp. Proc. (2007) pp. 0989-A11-03.
  6. H. Irie, K. Kita, K. Kyuno, A. Toriumi, "In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si," IEDM Tech. Dig. (2004) pp. 225-228.
  7. K. Uchida, T. Krishnamohan, K. C. Saraswat, Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," IEDM Tech. Dig. (2005) pp. 225-228.
  8. E. X. Wang, R. Kotlyar, S. Cea, M. Stettler, M. D. Giles, "Physics of hole transport in strained silicon MOSFET inversion layers," IEEE Trans. Electron Devices 53, 1840-1851 (2006).
  9. K. Uchida, R. Zednik, C. Lu, H. Jagannathan, J. McVitte, P. McIntyre, Y. Nishi, "Experimental study of biaxial and uniaxial strain effect on carrier mobility in bulk and ultrathin-body SOI MOSFETs," IEDM Tech. Dig. (2004) pp. 229-232.
  10. C. F. Huang, Y. J. Yang, C. Y. Peng, F. Yuan, C. W. Liu, "Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors," Appl. Phys. Lett. 89, 103502-1-103502-3 (2006).
  11. A. T. Voutsas, A. Limanov, J. S. Im, "Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films," J. Appl. Phys. 94, 7445-7452 (2003).

2006

E. X. Wang, R. Kotlyar, S. Cea, M. Stettler, M. D. Giles, "Physics of hole transport in strained silicon MOSFET inversion layers," IEEE Trans. Electron Devices 53, 1840-1851 (2006).

C. F. Huang, Y. J. Yang, C. Y. Peng, F. Yuan, C. W. Liu, "Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors," Appl. Phys. Lett. 89, 103502-1-103502-3 (2006).

2004

S. H. Won, J. K. Chung, C. B. Lee, H. C. Nam, J. H. Hur, J. Jang, "Effect of mechanical and electrical stresses on the performance of an a-Si:H TFT on plastic substrate," J. Electrochem. Soc. 151, G167-G170 (2004).

2003

A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494-1500 (2003).

A. T. Voutsas, A. Limanov, J. S. Im, "Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films," J. Appl. Phys. 94, 7445-7452 (2003).

2002

H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo, "Electrical response of amorphous silicon thin-film transistors under mechanical strain," J. Appl. Phys. 92, 6224-6229 (2002).

A. Lochtefeld, I. J. Djomehri, G. Samudra, D. A. Antoniadis, "New insights into carrier transport in n-MOSFETs," IBM J. Res. & Develop. 46, 347-357 (2002).

Appl. Phys. Lett.

C. F. Huang, Y. J. Yang, C. Y. Peng, F. Yuan, C. W. Liu, "Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors," Appl. Phys. Lett. 89, 103502-1-103502-3 (2006).

IBM J. Res. & Develop.

A. Lochtefeld, I. J. Djomehri, G. Samudra, D. A. Antoniadis, "New insights into carrier transport in n-MOSFETs," IBM J. Res. & Develop. 46, 347-357 (2002).

IEEE Trans. Electron Devices

A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494-1500 (2003).

IEEE Trans. Electron Devices

E. X. Wang, R. Kotlyar, S. Cea, M. Stettler, M. D. Giles, "Physics of hole transport in strained silicon MOSFET inversion layers," IEEE Trans. Electron Devices 53, 1840-1851 (2006).

J. Appl. Phys.

H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo, "Electrical response of amorphous silicon thin-film transistors under mechanical strain," J. Appl. Phys. 92, 6224-6229 (2002).

J. Appl. Phys.

A. T. Voutsas, A. Limanov, J. S. Im, "Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films," J. Appl. Phys. 94, 7445-7452 (2003).

J. Electrochem. Soc.

S. H. Won, J. K. Chung, C. B. Lee, H. C. Nam, J. H. Hur, J. Jang, "Effect of mechanical and electrical stresses on the performance of an a-Si:H TFT on plastic substrate," J. Electrochem. Soc. 151, G167-G170 (2004).

Other

K. Uchida, R. Zednik, C. Lu, H. Jagannathan, J. McVitte, P. McIntyre, Y. Nishi, "Experimental study of biaxial and uniaxial strain effect on carrier mobility in bulk and ultrathin-body SOI MOSFETs," IEDM Tech. Dig. (2004) pp. 229-232.

K. Y. Chan, E. Bunte, H. Stiebig, D. Knipp, "Contact effects in high mobility microcrystalline silicon thin-film transistor," Mater. Res. Soc. Symp. Proc. (2007) pp. 0989-A11-03.

H. Irie, K. Kita, K. Kyuno, A. Toriumi, "In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si," IEDM Tech. Dig. (2004) pp. 225-228.

K. Uchida, T. Krishnamohan, K. C. Saraswat, Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," IEDM Tech. Dig. (2005) pp. 225-228.

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