Abstract

Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiN<sub><i>x</i></sub>:H patterned to have low hydrogen content in the channel region and high hydrogen content in the source/drain region. After annealing to induce hydrogen diffusion from a-SiN<sub><i>x</i></sub>:H into the oxide semiconductor, the source–drain regions become more conductive and yet the channel region remains suitable for TFT operation, yielding a working self-aligned TFT structure. Such fabrication involves neither back-side exposure nor ion implantation, and thus may be compatible with the typical and cost-effective TFT manufacturing.

© 2009 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription