Abstract

Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm2/V · s with the In component (In + Zn)) varying from 0.2 to 0.5.

© 2009 IEEE

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  1. R. E. Presley, D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, J. F. Wager, "Transparent ring oscillator based on indium gallium oxide thin-film transistors," Solid-State Electron. 50, 500-503 (2006).
  2. P. Carcia, R. McLean, M. Reilly, "High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition," Appl. Phys. Lett. 88, 123509 (2006).
  3. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  4. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).
  5. M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, D. A. Keszler, "Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer," J. Phys. D: Appl. Phys. 40, 1335-1338 (2007).
  6. H.-H. Hsieh, C.-C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes," Appl. Phys. Lett. 91, 013502 (2007).
  7. H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, "Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples," J. Non-Crystal. Solids 198-200, 165-169 (1996).
  8. H. Hosono, M. Yasukawa, H. Kawazoe, "Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides," J. Non-Crystal. Solids 203, 334-344 (1996).
  9. D.-H. Lee, Y.-J. Chang, G. S. Herman, C.-H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).
  10. C. G. Choi, S.-J. Seo, B.-S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).
  11. B. J. Norris, J. Anderson, J. F. Wager, D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D: Appl. Phys. 36, 105-107 (2003).
  12. D. Redinger, V. Subrmanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices 54, 1301-1307 (2007).
  13. S. K. Volkman, B. A. Mattis, S. E. Molesa, J. B. Lee, A. dela F. Vombrock, T. Bakhishev, V. Subramanian, "A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles," IEEE IEDM Tech. Dig. (2004) pp. 769-772.
  14. M. O. Garcia, E. Vila, J. L. M. de Vidales, R. M. Rojas, K. Petrov, "On the thermal decomposition of the zinc(II) hydroxide chlorides ${\hbox{Zn}}_{5}({\hbox{OH}})_{8}{\hbox{Cl}}_{2}\cdot{\hbox{H}}_{2}{\hbox{O}}$ and B-Zn(OH)Cl," J. Mater. Sci. 29, 5429-5434 (1994).
  15. C. R. Patra, A. Gedanken, "Rapid synthesis of nanoparticles of hexagonal type ${\hbox{In}}_{2}{\hbox{O}}_{3}$ and spherical type ${\hbox{Tl}}_{2}{\hbox{O}}_{3}$ by microwave irradiation," New. J. Chem. 28, 1006-1065 (2004).
  16. N. Naghavi, L. Dupont, C. Marcel, C. Maugy, B. Laik, A. Rougier, C. Guery, J. M. Tarascon, "Systematic study and performance optimization of transparent conducting indium-zinc oxides thin films," Electrochem.Acta 46, 2007-2013 (2001).
  17. J.-H. Lee, S.-Y. Lee, B.-O. Park, "Fabrcation and characteritics of transparent conducting ${\rm In}_{2}{\rm O}_{3}-{\rm ZnO}$ thin films by ultrasonic spray pyrolysis," Mater. Sci. Eng.: B 127, 267-271p (2006).
  18. R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato, "Role of order and disorder on the electroinc performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, 044505 (2007).
  19. K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, H. Hosono, "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline ${\hbox{InGaO}}_{3}.{\hbox{ZnO}}_{5}$ films," Appl. Phys. Lett. 85, 1993 (2004).
  20. H. Hosono, "Ionic amorphous oxide semiconductor: Materials design, carrier transport, and device application," J. Non-Crystal. Solids 352, 851-858 (2006).

2008 (1)

C. G. Choi, S.-J. Seo, B.-S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).

2007 (5)

D. Redinger, V. Subrmanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices 54, 1301-1307 (2007).

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato, "Role of order and disorder on the electroinc performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, 044505 (2007).

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, D. A. Keszler, "Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer," J. Phys. D: Appl. Phys. 40, 1335-1338 (2007).

H.-H. Hsieh, C.-C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes," Appl. Phys. Lett. 91, 013502 (2007).

D.-H. Lee, Y.-J. Chang, G. S. Herman, C.-H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

2006 (4)

R. E. Presley, D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, J. F. Wager, "Transparent ring oscillator based on indium gallium oxide thin-film transistors," Solid-State Electron. 50, 500-503 (2006).

P. Carcia, R. McLean, M. Reilly, "High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition," Appl. Phys. Lett. 88, 123509 (2006).

J.-H. Lee, S.-Y. Lee, B.-O. Park, "Fabrcation and characteritics of transparent conducting ${\rm In}_{2}{\rm O}_{3}-{\rm ZnO}$ thin films by ultrasonic spray pyrolysis," Mater. Sci. Eng.: B 127, 267-271p (2006).

H. Hosono, "Ionic amorphous oxide semiconductor: Materials design, carrier transport, and device application," J. Non-Crystal. Solids 352, 851-858 (2006).

2005 (1)

E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

2004 (3)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, H. Hosono, "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline ${\hbox{InGaO}}_{3}.{\hbox{ZnO}}_{5}$ films," Appl. Phys. Lett. 85, 1993 (2004).

C. R. Patra, A. Gedanken, "Rapid synthesis of nanoparticles of hexagonal type ${\hbox{In}}_{2}{\hbox{O}}_{3}$ and spherical type ${\hbox{Tl}}_{2}{\hbox{O}}_{3}$ by microwave irradiation," New. J. Chem. 28, 1006-1065 (2004).

2003 (1)

B. J. Norris, J. Anderson, J. F. Wager, D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D: Appl. Phys. 36, 105-107 (2003).

2001 (1)

N. Naghavi, L. Dupont, C. Marcel, C. Maugy, B. Laik, A. Rougier, C. Guery, J. M. Tarascon, "Systematic study and performance optimization of transparent conducting indium-zinc oxides thin films," Electrochem.Acta 46, 2007-2013 (2001).

1996 (2)

H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, "Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples," J. Non-Crystal. Solids 198-200, 165-169 (1996).

H. Hosono, M. Yasukawa, H. Kawazoe, "Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides," J. Non-Crystal. Solids 203, 334-344 (1996).

1994 (1)

M. O. Garcia, E. Vila, J. L. M. de Vidales, R. M. Rojas, K. Petrov, "On the thermal decomposition of the zinc(II) hydroxide chlorides ${\hbox{Zn}}_{5}({\hbox{OH}})_{8}{\hbox{Cl}}_{2}\cdot{\hbox{H}}_{2}{\hbox{O}}$ and B-Zn(OH)Cl," J. Mater. Sci. 29, 5429-5434 (1994).

Adv. Mater. (2)

E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

D.-H. Lee, Y.-J. Chang, G. S. Herman, C.-H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

Appl. Phys. Lett. (3)

H.-H. Hsieh, C.-C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes," Appl. Phys. Lett. 91, 013502 (2007).

P. Carcia, R. McLean, M. Reilly, "High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition," Appl. Phys. Lett. 88, 123509 (2006).

K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, H. Hosono, "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline ${\hbox{InGaO}}_{3}.{\hbox{ZnO}}_{5}$ films," Appl. Phys. Lett. 85, 1993 (2004).

Electrochem. Solid-State Lett. (1)

C. G. Choi, S.-J. Seo, B.-S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).

Electrochem.Acta (1)

N. Naghavi, L. Dupont, C. Marcel, C. Maugy, B. Laik, A. Rougier, C. Guery, J. M. Tarascon, "Systematic study and performance optimization of transparent conducting indium-zinc oxides thin films," Electrochem.Acta 46, 2007-2013 (2001).

IEEE Trans. Electron Devices (1)

D. Redinger, V. Subrmanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices 54, 1301-1307 (2007).

J. Appl. Phys. (1)

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato, "Role of order and disorder on the electroinc performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, 044505 (2007).

J. Mater. Sci. (1)

M. O. Garcia, E. Vila, J. L. M. de Vidales, R. M. Rojas, K. Petrov, "On the thermal decomposition of the zinc(II) hydroxide chlorides ${\hbox{Zn}}_{5}({\hbox{OH}})_{8}{\hbox{Cl}}_{2}\cdot{\hbox{H}}_{2}{\hbox{O}}$ and B-Zn(OH)Cl," J. Mater. Sci. 29, 5429-5434 (1994).

J. Non-Crystal. Solids (3)

H. Hosono, N. Kikuchi, N. Ueda, H. Kawazoe, "Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples," J. Non-Crystal. Solids 198-200, 165-169 (1996).

H. Hosono, M. Yasukawa, H. Kawazoe, "Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides," J. Non-Crystal. Solids 203, 334-344 (1996).

H. Hosono, "Ionic amorphous oxide semiconductor: Materials design, carrier transport, and device application," J. Non-Crystal. Solids 352, 851-858 (2006).

J. Phys. D: Appl. Phys. (2)

B. J. Norris, J. Anderson, J. F. Wager, D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D: Appl. Phys. 36, 105-107 (2003).

M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, D. A. Keszler, "Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer," J. Phys. D: Appl. Phys. 40, 1335-1338 (2007).

Mater. Sci. Eng.: B (1)

J.-H. Lee, S.-Y. Lee, B.-O. Park, "Fabrcation and characteritics of transparent conducting ${\rm In}_{2}{\rm O}_{3}-{\rm ZnO}$ thin films by ultrasonic spray pyrolysis," Mater. Sci. Eng.: B 127, 267-271p (2006).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

New. J. Chem. (1)

C. R. Patra, A. Gedanken, "Rapid synthesis of nanoparticles of hexagonal type ${\hbox{In}}_{2}{\hbox{O}}_{3}$ and spherical type ${\hbox{Tl}}_{2}{\hbox{O}}_{3}$ by microwave irradiation," New. J. Chem. 28, 1006-1065 (2004).

Solid-State Electron. (1)

R. E. Presley, D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, J. F. Wager, "Transparent ring oscillator based on indium gallium oxide thin-film transistors," Solid-State Electron. 50, 500-503 (2006).

Other (1)

S. K. Volkman, B. A. Mattis, S. E. Molesa, J. B. Lee, A. dela F. Vombrock, T. Bakhishev, V. Subramanian, "A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles," IEEE IEDM Tech. Dig. (2004) pp. 769-772.

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