Abstract

The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200 °C. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150 °C. The substrate was dimensionally stable within the measurement resolution of 1 μm, allowing for well-aligned 8 × 8 and 32 × 32 arrays of 500 μm × 500 μm pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil.

© 2007 IEEE

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  1. C.-S. Yang, L. L. Smith, C. B. Arthur, G. N. Parsons, "Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. 18, 683-689 (2000).
  2. H. Gleskova, S. Wagner, V. Gašparík, P. Kováč, "150 °C amorphous silicon thin-film transistor technology for polyimide substrates," J. Electrochem. Soc. 148, G370-G374 (2001).
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  4. K. Long, I.-C. Cheng, A. Z. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Amorphous-silicon thin film transistors made at 280 °C on clear plastic substrates by interfacial stress engineering," J. Soc. Inf. Display, 167-176 (2006).
  5. Y. Chen, J. Au, P. Kazlas, A. Ritenour, H. Gates, M. McCreary, "Electronic paper: Flexible active-matrix electronic ink display," Nature 423, 136 (2003).
  6. H. Takao, M. Miyasaka, H. Kawai, H. Hara, A. Miyazaki, T. Kodaira, S. W. B. Tam, S. Inoue, T. Shimoda, "Flexible semiconductior deives: Fingerprint sensor and electrophoretic display," Proc. 34th Eur. Solid-State Device Research Conf. (2004) pp. 309-312.
  7. S. Inoue, H. Kawai, S. Kanbe, T. Saeki, T. Shimoda, "High-resolution microencapsulated electrophoretic display (EPD) driven by poly-si TFTs with four-level grayscale," IEEE Trans. Electron Devices 49, 1532-1539 (2002).
  8. G. H. Gelinck, H. Edzer, A. Huitema, E. V. Veenendaal, E. van Cantatore, L. Schrijnemakers, J. B. P. H. van Der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Hiusman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, D. M. De Leeuw, "Flexible active-matrix displays and shift registers based on solution-processed organic transistors," Nature Mater. 3, 106-110 (2004).
  9. E-Ink CorporationCambridgeMA www.eink.com.
  10. I.-C. Cheng, A. Kattamis, K. Long, J. C. Sturm, S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, 563-568 (2005).
  11. F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).

2006 (2)

K. Long, A. Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J. C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C," IEEE Electron Device Lett. 27, 111-113 (2006).

K. Long, I.-C. Cheng, A. Z. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Amorphous-silicon thin film transistors made at 280 °C on clear plastic substrates by interfacial stress engineering," J. Soc. Inf. Display, 167-176 (2006).

2005 (1)

I.-C. Cheng, A. Kattamis, K. Long, J. C. Sturm, S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, 563-568 (2005).

2004 (1)

G. H. Gelinck, H. Edzer, A. Huitema, E. V. Veenendaal, E. van Cantatore, L. Schrijnemakers, J. B. P. H. van Der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Hiusman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, D. M. De Leeuw, "Flexible active-matrix displays and shift registers based on solution-processed organic transistors," Nature Mater. 3, 106-110 (2004).

2003 (1)

Y. Chen, J. Au, P. Kazlas, A. Ritenour, H. Gates, M. McCreary, "Electronic paper: Flexible active-matrix electronic ink display," Nature 423, 136 (2003).

2002 (1)

S. Inoue, H. Kawai, S. Kanbe, T. Saeki, T. Shimoda, "High-resolution microencapsulated electrophoretic display (EPD) driven by poly-si TFTs with four-level grayscale," IEEE Trans. Electron Devices 49, 1532-1539 (2002).

2001 (1)

H. Gleskova, S. Wagner, V. Gašparík, P. Kováč, "150 °C amorphous silicon thin-film transistor technology for polyimide substrates," J. Electrochem. Soc. 148, G370-G374 (2001).

2000 (1)

C.-S. Yang, L. L. Smith, C. B. Arthur, G. N. Parsons, "Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. 18, 683-689 (2000).

1993 (1)

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).

Appl. Phys. Lett. (1)

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).

IEEE Electron Device Lett. (1)

K. Long, A. Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J. C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C," IEEE Electron Device Lett. 27, 111-113 (2006).

IEEE Trans. Electron Devices (1)

S. Inoue, H. Kawai, S. Kanbe, T. Saeki, T. Shimoda, "High-resolution microencapsulated electrophoretic display (EPD) driven by poly-si TFTs with four-level grayscale," IEEE Trans. Electron Devices 49, 1532-1539 (2002).

J. Soc. Inf. Display (1)

I.-C. Cheng, A. Kattamis, K. Long, J. C. Sturm, S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, 563-568 (2005).

J. Electrochem. Soc. (1)

H. Gleskova, S. Wagner, V. Gašparík, P. Kováč, "150 °C amorphous silicon thin-film transistor technology for polyimide substrates," J. Electrochem. Soc. 148, G370-G374 (2001).

J. Soc. Inf. Display (1)

K. Long, I.-C. Cheng, A. Z. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Amorphous-silicon thin film transistors made at 280 °C on clear plastic substrates by interfacial stress engineering," J. Soc. Inf. Display, 167-176 (2006).

J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (1)

C.-S. Yang, L. L. Smith, C. B. Arthur, G. N. Parsons, "Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. 18, 683-689 (2000).

Nature (1)

Y. Chen, J. Au, P. Kazlas, A. Ritenour, H. Gates, M. McCreary, "Electronic paper: Flexible active-matrix electronic ink display," Nature 423, 136 (2003).

Nature Mater. (1)

G. H. Gelinck, H. Edzer, A. Huitema, E. V. Veenendaal, E. van Cantatore, L. Schrijnemakers, J. B. P. H. van Der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Hiusman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, D. M. De Leeuw, "Flexible active-matrix displays and shift registers based on solution-processed organic transistors," Nature Mater. 3, 106-110 (2004).

Other (2)

E-Ink CorporationCambridgeMA www.eink.com.

H. Takao, M. Miyasaka, H. Kawai, H. Hara, A. Miyazaki, T. Kodaira, S. W. B. Tam, S. Inoue, T. Shimoda, "Flexible semiconductior deives: Fingerprint sensor and electrophoretic display," Proc. 34th Eur. Solid-State Device Research Conf. (2004) pp. 309-312.

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