Abstract
The transition of thin-film transistor (TFT) backplanes from rigid plate
glass to flexible substrates requires the development of a generic TFT backplane
technology on a clear plastic substrate. To be sufficiently stable under bias
stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures,
therefore the substrate must withstand high temperatures. We fabricated a-Si:H
TFT backplanes on a clear plastic substrate at 200 °C. The measured stability of the TFTs
under gate bias stress was superior to TFTs fabricated at 150 °C. The substrate was dimensionally
stable within the measurement resolution of 1 μm, allowing for well-aligned 8 × 8 and 32 × 32 arrays of 500 μm × 500 μm pixels. The operation of the backplane is demonstrated with an
electrophoretic display. This result is a step toward the drop-in replacement
of glass substrates by plastic foil.
© 2007 IEEE
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