Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Display Technology
  • Vol. 3,
  • Issue 2,
  • pp. 160-175
  • (2007)

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Not Accessible

Your library or personal account may give you access

Abstract

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for “warm” white color temperatures (~3000–4000 K) and high color rendering (CRI > 80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m<sup>2</sup> white at 1 A forward current in 1 x 1 mm<sup>2</sup> chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs.

© 2007 IEEE

PDF Article
More Like This
Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor

Jinn-Kong Sheu, Fu-Bang Chen, Yen-Chin Wang, Chih-Chiang Chang, Shih-Hsien Huang, Chun-Nan Liu, and Ming-Lun Lee
Opt. Express 23(7) A232-A239 (2015)

Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property

Yu-Ho Won, Ho Seong Jang, Kyoung Woo Cho, Yong Seon Song, Duk Young Jeon, and Ho Ki Kwon
Opt. Lett. 34(1) 1-3 (2009)

Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a β-Ga2O3 substrate

Yiwei Duo, Yu Yin, Rui He, Renfeng Chen, Yijian Song, Hao Long, Junxi Wang, and Tongbo Wei
Opt. Lett. 49(2) 254-257 (2024)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved