Abstract
The performance characteristics of green light-emitting diodes (LEDs)
grown by metal–organic chemical-vapor deposition were investigated to
study the dependence of the device performance on the materials and the growth
conditions of p-type layer grown after the InGaN multiple-quantum-well active
region. The electrical and structural qualities of Mg-doped p-In<sub>0.04</sub> Ga<sub>0.96</sub> N and p-GaN layers grown under different growth conditions were studied to optimize the growth conditions of p-type hole injection layers of green LEDs. A free-hole concentration of p = 1.6×10<sup>18</sup> cm<sup>-3</sup> of with a resistivity of 0.33 Ω · cm was achieved for p-GaN:Mg layers grown at 1040°C. Lower hole concentrations and mobilities
and rough surfaces were obtained when the growth temperature was decreased
to 930°C in H<sub>2</sub> ambient. In the case of p - In<sub>0.04</sub>Ga<sub>0.96</sub>N grown at 840 °C N<sub>2</sub>,
a significant improvement of the hole concentration was achieved due to the
reduced ionization activation energy of Mg acceptors in InGaN. Also we observed
that as-grown p-GaN layers grown in N<sub>2</sub> ambient showed p-type properties without Mg dopant activation.
The electrical and optical properties of In<sub>0.25</sub> Ga<sub>0.75</sub> N/GaN
multiple-quantum-well green LEDs with such different
p-layers were investigated. The electroluminescence intensity was improved
for the LEDs with p-In<sub>0.04</sub> layers grown at 840°C as compared to the LEDs with p-GaN layers grown at higher temperatures
due to the reduced thermal damage to the active region, high hole injection,
and low piezoelectric field induced in the active region. p-InGaN layers are
very attractive candidates for the p-layer in green LED structures. The low
temperature and N<sub>2</sub> ambient used during the growth of InGaN layers are beneficial to
protect the InGaN active region containing high-indium composition quantum-well
layers in addition to the advantage of providing a higher hole concentration.
However, the LEDs with p-In<sub>0.04</sub> Ga<sub>0.96</sub> N layer showed a slightly higher turn on voltage which could originate from the potential barrier for hole transport at the interface of the p-InGaN
layer and the last GaN quantum-well barrier. to reduce this problem, we designed
and characterized an LED structure having a graded indium composition in the p-In<sub>0.04</sub> Ga<sub>0.96</sub>N layer in order to improve hole transport into the active region. Optimized LEDs with p-InGaN layers grown in a N<sub>2</sub> ambient showed much brighter electroluminescence due to low damage to the active region during p-InGaN layer growth.
© 2007 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription