Abstract

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

© 2007 IEEE

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Appl Phys Lett.

G. Fortunato, P. Migliorato, "Determination of gap state density in polycrystalline silicon by field-effect conductance," Appl Phys Lett. 49, 1025-1027 (1986).

Appl. Phys. Lett.

J. S. Im, R. S. Sposili, M. A. Crowder, "Single-crystal Si films for thin-film transistor devices," Appl. Phys. Lett. 70, 3434-3436 (1997).

Electrochemical and Solid-State Letter

C. L. Fan, M. C. Chen, "Performance improvement of excimer laser annealed poly-Si TFTs using fluorine ion implantation," Electrochemical and Solid-State Letter 5, G75-G77 (2002).

Electrochemical and Solid-State Letters

C. H. Tu, T. C. Chang, P. T. Liu, H. W. Zan, Y. H. Tai, C. Y. Yang, Y. C. Wu, H. C. Liu, W. R. Chen, C. Y. Chang, "Enhanced performance of poly-Si thin film transistors using fluorine ions implantation," Electrochemical and Solid-State Letters 8, G246-G248 (2005).

IEEE Electron Device Letter

C. H. Tu, T. C. Chang, P. T. Liu, C. Y. Yang, H. C. Liu, W. R. Chen, Y. C. Wu, C. Y. Chang, "Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC," IEEE Electron Device Letter 27, 262-264 (2006).

IEEE Electron Device Lett.

T. J. King, K. C. Saraswat, "Low-temperature (less than or equal to 550°C) fabrication of poly-Si thin-film transistors," IEEE Electron Device Lett. 13, 309-311 (1992).

IEEE Electron Device Letter

I. W. Wu, A. G. Lewis, T. Y. Huang, A. Chiang, "Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation," IEEE Electron Device Letter 12, 181-183 (1993).

IEEE Trans. Electron Devices

H. N. Chern, C. L. Lee, T. F. Lei, "The effects of fluorine passivation on polysilicon thin-film transistors," IEEE Trans. Electron Devices 41, 698-702 (1994).

G. K. Giust, T. W. Sigmon, "High-performance thin-film transistors fabricated using exciter laser processing and grain engineering," IEEE Trans. Electron Devices 45, 925-932 (1998).

S. Banerjee, R. Sundaresan, H. Shichijo, S. Malhi, "Hot-electron degradation of n-channel polysilicon MOSFETs," IEEE Trans. Electron Devices 35, 152-157 (1988).

M. Hack, A. G. Lewis, I. W. Wu, "Physical models for degradation effects in polysilicon thin-film transistors," IEEE Trans. Electron Devices 40, 890-897 (1993).

J. Appl. Phys.

K. Nakazawa, "Recrystallization of amorphous silicon films deposited by low-pressure chemical vapor deposition from Si2H6 gas," J. Appl. Phys. 69, 1703-1706 (1991).

Jan. J. Appl. Phy.

J. W. Park, B. T. Ahn, K. Lee, "Effects of F+ implantation on the characteristics of poly-Si films and low-temperature n-ch poly-Si thin-film transistors," Jan. J. Appl. Phy. 34, 1436-1441 (1995).

Journal of Non-Crystalline Solids

R. E. I. Schropp, B. Stannowski, J. K. Rath, "New challenges in thin film transistor (TFT) research," Journal of Non-Crystalline Solids 299–302, 1304-1310 (2002).

Jpn. J. Appl. Phys.

T. Kuan, A. Chou, J. Kanicki, "Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics," Jpn. J. Appl. Phys. 38, 12251-2255 (1999).

Semicond. Science Tech

S. D. Brotherton, Semicond"Polycrystalline silicon thin film transistors," Semicond. Science Tech 10, 721-738 (1995).

Other

H. Oshima, S. Morozumi, "Future trends for TFT integrated circuits on glass substrates," IEDM Tech. Dig. (1989) pp. 157-160.

H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, S. Tsuda, S. Nakano, "High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics," IEDM Tech. Dig (1991) pp. 563-566.

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