Abstract
To achieve low-voltage organic thin-film transistors (OTFTs) with printing or coating processes over large area, a thick gate dielectric layer is preferred. Taking this into consideration, a common solution for low-voltage OTFTs is using large-permittivity (high-
$k$
) dielectric material to enlarge the gate dielectric capacitance. Our recent work shows that reducing the subgap density of states (DOS) at the channel can also help to achieve low-voltage OTFTs. This approach does
not need large gate dielectric capacitance, and thus a low-
$k$
and thick gate dielectric layer can be used. In this work, device/circuit mixed-mode simulations are carried out to compare the performance of the
two type low-voltage OTFTs as switches in active-matrix backplanes. It is shown that the low-voltage OTFT with reduced subgap DOS can achieve faster charging and discharging. The less parasitic and storage capacitance with the low-
$k$
dielectric layer would also reduce the required dynamic power.
© 2016 IEEE
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