Abstract
In this paper, we proposed and numerically investigated
InGaN/GaN light-emitting diodes (LEDs) with a last barrier of GaN-InGaN.
Through simulations, we investigated their voltage–current curves,
performance curves, carrier concentrations, radiative recombination
rates, and energy band diagrams. The simulation results show that
the InGaN/GaN LEDs with the GaN-InGaN last barrier have lower turn-on
voltage, higher output light power, and better efficiency droop than
LEDs with the conventional GaN last barrier. This improvement comes
from the appropriately modified energy band diagram, which aids in
electron confinement and hole injection, as well as in uniformly distributing
these carriers in the quantum wells.
© 2015 IEEE
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