Abstract
Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped
AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are
investigated numerically. As a benefit of this special structural design, the electrons
would spill over the EBL and recombine with the holes in the wells close to the p-side.
Moreover, holes in the wells that are close to the n-side increase to a higher
concentration due to the presence of a new shallow potential well in the valence band.
The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal
quantum efficiency as well as light output power compared with the conventional single
p-type AlGaN EBL structure. These improvements are primarily contributed to the
enhancement on electrons confinement and holes injection.
© 2016 IEEE
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