Abstract
A novel low-temperature polycrystalline-silicon thin-film-transistor
pixel circuit for 3D active-matrix organic light-emitting diode (AMOLED)
displays is presented in this work. The proposed pixel circuit employs
high frame rate (240 Hz) emission driving scheme and only needs
3.5
$~\mu{s}$
for input data period. Thus, 3D AMOLED displays can be
realized under high speed operations. The simulation results demonstrate
excellent stability in the proposed pixel circuit. The relative current
error rate is only 0.967% under the threshold voltage deviation (
$\Delta {{\rm V}_{{\rm TH}\_{\rm
DTFT}}} = {\pm} {0.33 V}$
) of driving TFT. With
an OLED threshold voltage detecting architecture, the OLED current
can be increased with the increased OLED threshold voltage to compensate
for the OLED luminance degradation. The proposed pixel circuit can
therefore effectively compensate for the DTFT threshold voltage shift
and OLED electric degradation at the same time.
© 2016 IEEE
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