Abstract
This study examined the electrical properties of a-IGZO thin-film
transistors (TFTs) with a gate insulator of
${{SiO}}_{2}$
, in which a more TFT-industry-compatible sputtering technique
was used for all processing steps. Instead of plasma enhanced chemical
vapor deposition, a room-temperature sputtered
${{SiO}}_{2}$
gate insulator was used, which is more preferable for the
simple and low cost process for oxide TFTs. The dielectric strength
of the sputtered
${{SiO}}_{2}$
film with an oxygen ratio of 6.25%
was 6.3 MV/cm, which is sufficient for a gate insulator. The a-IGZO
TFTs with the sputtered
${{SiO}}_{2}$
gate insulators
showed the optimal device parameters after post-annealing at
$400^{\circ}{{C}}$
for 1 hour in air: saturation field-effect mobility of
${{3.80}}~{{cm}}^{2}/{{V}}\cdot{\rm
s}$
,
$V_{\rm th}$
of
$-{{2.84}}~{{V}}$
, on/off
ratio of
${{1.43}}\times
{{10}}^{5}$
, and
$S.S$
of 0.88 V/dec.
© 2015 IEEE
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