Abstract

Highly photosensitive Si film of new structure was successfully fabricated using semiconductor blue laser diode annealing (BLDA). By adopting back-reflection layer, simulation results show 86% increase of light absorption in red or IR region. Peaks from XRD results showed that Si film was crystallized clearly after BLDA in spite of the new back-reflection layer of Ti. All the process for photoconductive film was conducted using r.f. sputtering and vacuum evaporation without adopting CVD. After ${{H}}_{2}$ annealing, photoconductivity for the patterned Si films of 50 nm thickness increased remarkably up from ${{1.2}} \times {{10}}^{-4}$ to ${{3.2}} \times {{10}}^{-1}$ S/cm under white light of 100 mW/cm $^{2}$ . Adopting back-reflection layer under the crystallized Si film using BLDA is promising to integrate functional photosensors with TFTs on panel.

© 2015 IEEE

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