Abstract
This work proposes a new pixel structure based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) and a parallel addressing scheme for high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit compensates for the nonuniformity of luminance that is caused by shifts in the threshold voltage (
${{V}}_{{\rm{TH}}}$
) and mobility of driving TFTs. Measurement results verify that the parallel addressing scheme successfully extends the compensation time and accurately detects the
${{V}}_{{\rm{TH}}}$
of the driving TFT. Moreover, the proposed circuit reduces the variations of OLED luminance from more than 83% to less than 13% when the
${{V}}_{{\rm{TH}}}$
and mobility of driving TFT shifts by 1 V and 30%, respectively, and the
${{V}}_{{\rm{TH}}}$
of OLED varies from 0 to 0.9 V.
© 2016 IEEE
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