Abstract

We investigated the effects of rising edge during positive unipolar dynamic stress and bipolar dynamic stress under darkness and illumination with duty ratio D of dynamic stress from 1 to 50%. Threshold voltage shift ${\rm{\Delta}}V_{\rm{th}}$ increased with effective time $t_{\rm{eff}}$ as the product of stress duration and D. ${\rm{\Delta}}V_{\rm{th}}$ was higher during bipolar stress than during positive unipolar stress and under low D than at high D. Degradation of amorphous InGaZnO thin film transistor is related to the number and amplitude of rising edges. We suggest that an additional degradation under dynamic stress is originated from high electric field in channel region at rising edge.

© 2016 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription