Abstract
Effects of low temperature
$({{300}}^{\circ}{C})$
annealing
on
${Cu}_{2}{O}$
films were investigated by analyzing the film stacking
structures with photoemission spectroscopy, X-ray reflectivity spectroscopy
and spectroscopic ellipsometory in relation to
$p$
-channel
TFT characteristics and possible origins of trap states. The Hall
mobility of optimum
${Cu}_{2}{O}$
films was
${{2.1}}~{cm}^{2}/({V}{\cdot}{s})$
; however, the bottom-gate
${Cu}_{2}{O}$
TFT exhibited
a much lower field effect mobility of the order of 10
$^{-4}~{cm}^{2}/({V}{\cdot}{s})$
and an on/off drain current ratio of 10
$^{3}$
. This
work detected a surface layer and an interface layer in the
${Cu}_{2}{O}/~{SiO}_{2}$
samples, i.e., the surface layer included the
$2+$
state
of Cu ions that would form subgap hole trap states at the back channel
region. In addition, the low-density layer at the
${Cu}_{2}{O}{{--}}{SiO}_{2}$
interface would produce extra interfacial trap states.
© 2015 IEEE
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