Abstract
A novel five-period AlGaN/AlGaN multiple quantum wells light-emitting
diodes (LEDs) structure with Al content graded AlGaN barriers is designed
in order to improve the electrical and optical performance of ultraviolet
LEDs (UV-LEDs), and the effects are analyzed by using the APSYS simulation
programs. The results show that the effective potential height for
electrons is increased, and simultaneously the effective potential
height for holes is decreased with the increased number of graded
AlGaN barriers, which contributes to less electron leakage and better
hole injection efficiency. Thus, the internal quantum efficiency and
light output power are significantly improved, and the efficiency
droop is also mitigated effectively as the number of graded AlGaN
barriers increases. However, there is an undesired peak emission in
the last barrier when it is replaced by the graded AlGaN barrier.
© 2015 IEEE
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