Abstract

In this paper, we present a consistent model to analyze the drain current mismatch of organic thin-film transistors. The model takes charge fluctuations and edge effects into account, to predict the fluctuations of drain currents. A Poisson distribution for the number of charge carriers is assumed to represent the random distribution of charge carriers in the channel. The edge effects due to geometric variations in fabrication processes are interpreted in terms of the fluctuations of channel length and width. The simulation results are corroborated by experimental results taken from over 80 organic transistors on a flexible plastic substrate.

© 2015 IEEE

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