Abstract
In the present work, bottom-gate top-contact organic field effect
transistors (OFETs) were fabricated by evaporating a pentacene semiconductor
film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer
containing methacrylate units. The PMMA copolymer was synthesized
in order to combine the well-known insulating properties of PMMA with
the possibility to be efficiently photocured enabling photopatterning-based
organic circuitry integration processes. The properties of the pentacene
layer deposited on ITO/PMMA copolymer stack were studied through morphological
and structural analyses. Device photoresponses and photoexcitated
transients were investigated and compared to reference devices based
on standard PMMA gate dielectric.
© 2014 IEEE
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