Abstract
The authors propose the use of SU-8 to passivate the isolation trenches of
GaN-based high-voltage light-emitting diodes (HV-LEDs). Compared with the HV-LED chips
prepared with pure SU-8 passivation, it was found that we could increase the production
yield from
$\leq$
35% to
$\geq$
88% using properly diluted SU-8 passivation layer. It was also found
that we could reduce the passivation layer thickness by diluting SU-8 with a ratio of
5:2. Furthermore, it was found that the properly diluted SU-8 could provide smooth
surface, minimized crack formation, and thus larger production yield.
© 2015 IEEE
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