Abstract
The effects of thin Mg back diffusion capping layers on the
performance enhancement of InGaN/GaN light emitting diodes (LEDs)
with p-InGaN last barrier are investigated experimentally and numerically.
By inserting a thin capping layer before the p-InGaN last barrier,
the Mg back diffusion effect could be effectively suppressed and the
optical performance of LEDs could be enhanced due to the improved
hole injection and reduced electron leakage. What is more, the p-InGaN
LED with GaN capping layer showed further reduced efficiency droop
compared with that with InGaN capping layer as a result of the more
uniform hole distribution in active layers.
© 2014 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription