Abstract

Amorphous indium gallium zinc oxide (a-InGaZnO) flexible thin-film transistors (TFTs) were deposited on polyethylene terephthalate (PET) substrates at low temperature using a triple-targets magnetron radio frequency (RF) cosputter system. During the deposition of InGaZnO films, triple targets of ${In}_{2}{O}_{3}$ target, ${Ga}_{2}{O}_{3}$ target, and Zn target were simultaneously sputtered. By varying the mixing gas ratios, the ${Ar/O}_{2}$ ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible TFTs operated in n-type enhancement mode with a transconductance of ${{4.95}}\times {{10}}^{-5}\ {S}$, a field-effect mobility of ${57.2 cm}^{2}/{V}\cdot{{s}}$, an on/off ratio of ${{4.19}}\times {{10}}^{7}$, a turn-on voltage of 0 V, a threshold voltage of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better than those of the single InGaZnO target flexible TFTs.

© 2014 IEEE

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