Abstract

Amorphous indium gallium zinc oxide (a-InGaZnO) flexible thin-film transistors (TFTs) were deposited on polyethylene terephthalate (PET) substrates at low temperature using a triple-targets magnetron radio frequency (RF) cosputter system. During the deposition of InGaZnO films, triple targets of ${In}_{2}{O}_{3}$ target, ${Ga}_{2}{O}_{3}$ target, and Zn target were simultaneously sputtered. By varying the mixing gas ratios, the ${Ar/O}_{2}$ ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible TFTs operated in n-type enhancement mode with a transconductance of ${{4.95}}\times {{10}}^{-5}\ {S}$, a field-effect mobility of ${57.2 cm}^{2}/{V}\cdot{{s}}$, an on/off ratio of ${{4.19}}\times {{10}}^{7}$, a turn-on voltage of 0 V, a threshold voltage of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better than those of the single InGaZnO target flexible TFTs.

© 2014 IEEE

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  1. Y. H. Yu, Y. J. Lee, Y. H. Li, C. H. Kuo, C. H. Li, Y. J. Hsieh, C. T. Liu, Y. J. Emery Chen, "An LTPS TFT demodulator for RFID tags embeddable on panel displays," IEEE Trans. Microw. Theory Techn. 57, 1356-1361 (2009).
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2014 (1)

2012 (2)

Y. H. Lin, H. Y. Lee, C. T. Lee, C. H. Chou, "Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin filmtransistors," Mater. Chemi. Phys. 134, 1203-1207 (2012).

H. J. In, O. K. Kwon, "A simple pixel structure using polycrystalline-silicon thin-film transistors for high-resolution active-matrix organic light-emitting diode displays," IEEE Electron Device Lett. 33, 1018-1020 (2012).

2011 (1)

A. Olziersky, P. Barquinha, A. Vilà, C. Magana, E. Fortunato, J. R. Morantea, R. Martins, "Role of $\hbox{Ga}_{2}\hbox{O}_{3}{\hbox{--}}\hbox{In}_{2}\hbox{O}_{3}{\hbox{--}}\hbox{ZnO}$ channel composition on the electrical performance of thin-film transistors," Mater. Chem. Phys. 131, 512-518 (2011).

2010 (1)

T. C. Chen, T. C. Chang, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, P. L. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without ${{SiO}}_{x}$ passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.

2009 (3)

J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID: 013503.

D. Y. Cho, J. Song, K. D. Na, C. S. Hwang, J. H. Jeong, J. K. Jeong, Y. G. Mo, "Local structure and conduction mechanism in amorphous In-Ga-Zn-O films," Appl. Phys. Lett. 94, (2009) Art. ID: 112112.

Y. H. Yu, Y. J. Lee, Y. H. Li, C. H. Kuo, C. H. Li, Y. J. Hsieh, C. T. Liu, Y. J. Emery Chen, "An LTPS TFT demodulator for RFID tags embeddable on panel displays," IEEE Trans. Microw. Theory Techn. 57, 1356-1361 (2009).

2008 (4)

M. H. Kang, J. H. Hur, Y. D. Nam, E. H. Lee, S. H. Kim, J. Jang, "An optical feedback compensation circuit with a-Si:H thin-film transistors for active matrix organic light emitting diodes," J. Non-Cryst. Solids 354, 2523-2528 (2008).

J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K. K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K. W. Kwon, Y. Park, "High-performance amorphous gallium indium zinc oxide thin-film transistors through $\hbox{N}_{2}\hbox{O}$ plasma passivation," Appl. Phys. Lett. 93, (2008) Art. ID 053505.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs," Electrochem. Solid-State Lett. 11, H248-H251 (2008).

2007 (2)

T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In ${{--}}$ Ga ${{--}}$ Zn ${{--}}$ O system," Appl. Phys. Lett. 90, (2007) Art. ID 242114.

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, (2007) Art. ID 044505.

2006 (2)

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, "High-mobility thin-film transistor with amorphous ${{InGaZnO}}_{4}$ channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett. 89, (2006) Art. ID 112123.

H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, device application," J. Non-Cryst. Solids 352, 851-858 (2006).

2004 (2)

K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, H. Hosono, "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline $\hbox{InGaO}_{3}(\hbox{ZnO})_{5}$ films," Appl. Phys. Lett. 85, 1993-1995 (2004).

K. Nomura, H. Ohta, A. Takagi, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

2003 (1)

H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, H. Hosono, "Single-crystalline films of the homologous series ${{InGaO}}_{3}{{(ZnO)}}_{m}$ grown by reactive solid-phase epitaxy," Adv. Funct. Mater. 13, 139-144 (2003).

1989 (1)

M. Shur, M. Hack, J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys. 66, 3371-3380 (1989).

Adv. Funct. Mater. (1)

H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, H. Hosono, "Single-crystalline films of the homologous series ${{InGaO}}_{3}{{(ZnO)}}_{m}$ grown by reactive solid-phase epitaxy," Adv. Funct. Mater. 13, 139-144 (2003).

Appl. Phys. Lett. (1)

J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K. K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K. W. Kwon, Y. Park, "High-performance amorphous gallium indium zinc oxide thin-film transistors through $\hbox{N}_{2}\hbox{O}$ plasma passivation," Appl. Phys. Lett. 93, (2008) Art. ID 053505.

Appl. Phys. Lett. (6)

T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In ${{--}}$ Ga ${{--}}$ Zn ${{--}}$ O system," Appl. Phys. Lett. 90, (2007) Art. ID 242114.

K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, H. Hosono, "Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline $\hbox{InGaO}_{3}(\hbox{ZnO})_{5}$ films," Appl. Phys. Lett. 85, 1993-1995 (2004).

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, "High-mobility thin-film transistor with amorphous ${{InGaZnO}}_{4}$ channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett. 89, (2006) Art. ID 112123.

J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID: 013503.

D. Y. Cho, J. Song, K. D. Na, C. S. Hwang, J. H. Jeong, J. K. Jeong, Y. G. Mo, "Local structure and conduction mechanism in amorphous In-Ga-Zn-O films," Appl. Phys. Lett. 94, (2009) Art. ID: 112112.

T. C. Chen, T. C. Chang, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, P. L. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without ${{SiO}}_{x}$ passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.

Electrochem. Solid-State Lett. (1)

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs," Electrochem. Solid-State Lett. 11, H248-H251 (2008).

IEEE Electron Device Lett. (1)

H. J. In, O. K. Kwon, "A simple pixel structure using polycrystalline-silicon thin-film transistors for high-resolution active-matrix organic light-emitting diode displays," IEEE Electron Device Lett. 33, 1018-1020 (2012).

IEEE Trans. Microw. Theory Techn. (1)

Y. H. Yu, Y. J. Lee, Y. H. Li, C. H. Kuo, C. H. Li, Y. J. Hsieh, C. T. Liu, Y. J. Emery Chen, "An LTPS TFT demodulator for RFID tags embeddable on panel displays," IEEE Trans. Microw. Theory Techn. 57, 1356-1361 (2009).

J. Appl. Phys. (2)

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, (2007) Art. ID 044505.

M. Shur, M. Hack, J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys. 66, 3371-3380 (1989).

J. Display Technol. (1)

J. Non-Cryst. Solids (2)

H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, device application," J. Non-Cryst. Solids 352, 851-858 (2006).

M. H. Kang, J. H. Hur, Y. D. Nam, E. H. Lee, S. H. Kim, J. Jang, "An optical feedback compensation circuit with a-Si:H thin-film transistors for active matrix organic light emitting diodes," J. Non-Cryst. Solids 354, 2523-2528 (2008).

Mater. Chem. Phys. (1)

A. Olziersky, P. Barquinha, A. Vilà, C. Magana, E. Fortunato, J. R. Morantea, R. Martins, "Role of $\hbox{Ga}_{2}\hbox{O}_{3}{\hbox{--}}\hbox{In}_{2}\hbox{O}_{3}{\hbox{--}}\hbox{ZnO}$ channel composition on the electrical performance of thin-film transistors," Mater. Chem. Phys. 131, 512-518 (2011).

Mater. Chemi. Phys. (1)

Y. H. Lin, H. Y. Lee, C. T. Lee, C. H. Chou, "Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin filmtransistors," Mater. Chemi. Phys. 134, 1203-1207 (2012).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Thin Solid Films (1)

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

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