Abstract
In this paper, we present a study on electrical and optical characteristics
of n-type tin-oxide nanowires integrated based on top-down scale-up strategy.
Through a combination of contact printing and plasma based back-channel passivation,
we have achieved stable electrical characteristics with standard deviation
in mobility and threshold voltage of 9.1% and 25%, respectively, for a large
area of 1
$\times$
1
${{cm}}^{2}$
area. Through use of contact printing, high alignment of nanowires
was achieved thus minimizing the number of nanowire-nanowire junctions, which
serve to limit carrier transport in the channel. In addition, persistent photoconductivity
has been observed, which we attribute to oxygen vacancy ionization and subsequent
elimination using a gate pulse driving scheme.
© 2014 IEEE
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