Abstract

This letter presents a low power In–Zn–O thin-film transistors (IZO TFTs) scan driver including a clock-controlled inverter to avoid the direct current path compared with the conventional diode-connected inverter. The so-called bi-side scan driver is divided into two parts, laying on the two sides of panel to drive the odd lines and the even lines of pixel arrays, respectively. Due to a smaller duty ratio of the clock in the output section than that of clocks in the inner section, only one large size transistor is required for both charging and discharging the scan line, and the discharging speed is faster than that of other merging TFT methods because it is at the bootstrapped state for the whole driving phase. Experimental results show that the output signal of each stage for the proposed scan driver has no distortion and exhibits good noise-suppressed characteristics. It is also verified that the power consumption of the clock-controlled inverter can be significantly reduced compared with the conventional diode-connected inverter.

© 2014 IEEE

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  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  2. K. M. Lim, K. Lee, J. S. Yoo, J. M. Yoon, M. K. Baek, J. S. Yoo, Y. S. Jung, J. Park, S. W. Lee, H. Kang, C. D. Kim, I. J. Chung, "A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver including 6-bit DAC," Solid State Electron. 49, 1107-1111 (2005).
  3. C. Liao, C. He, T. Chen, D. Dai, S. Chung, T. S. Jen, S. Zhang, "Implementation of an a-Si: H TFT gate driver using a five-transistor integrated approach," IEEE Trans. Electron Devices 59, 2142-2148 (2012).
  4. B. Kim, C. I. Ryoo, S. J. Kim, J. U. Bae, H. S. Seo, C. D. Kim, M. K. Han, "New depletion-mode IGZO TFT shift register," IEEE Electron Device Lett. 32, 158-160 (2011).
  5. S. J. Yoo, S. J. Hong, J. S. Kang, H. J. In, O. K. Kwon, "A low-power single-clock-driven scan driver using depletion-mode a-IGZO TFTs," IEEE Electron Device Lett. 33, 402-404 (2012).
  6. C. K. Kang, Y. S. Park, S. Park, Y. G. Mo, B. H. Kim, S. S. Kim, "Integrated scan driver with oxide TFTs using floating gate method," Proc. Soc. Inf. Display 25-27 (2011).
  7. B. Kim, S. C. Choi, S. Y. Lee, S. H. Kuk, Y. H. Jang, C. D. Kim, M. K. Han, "A depletion-mode a-IGZO TFT shift register with a signal low-voltage-level power signal," IEEE Electron Device Lett. 32, 1092-1094 (2011).
  8. S. J. Hong, J. S. Kang, C. H. Lee, O. K. Kwon, "Low-power and small-sized scan driver using amorphous oxide TFTs," Proc. Soc. Inf. Display 1108-1111 (2012).
  9. M. Li, L. Lan, M. Xu, D. Luo, P. Xiao, J. Peng, "Performance improvement of oxide thin-film transistors with a two-step-annealing method," Solid State Electron. 91, 9-12 (2014).

2014 (1)

M. Li, L. Lan, M. Xu, D. Luo, P. Xiao, J. Peng, "Performance improvement of oxide thin-film transistors with a two-step-annealing method," Solid State Electron. 91, 9-12 (2014).

2012 (3)

S. J. Hong, J. S. Kang, C. H. Lee, O. K. Kwon, "Low-power and small-sized scan driver using amorphous oxide TFTs," Proc. Soc. Inf. Display 1108-1111 (2012).

S. J. Yoo, S. J. Hong, J. S. Kang, H. J. In, O. K. Kwon, "A low-power single-clock-driven scan driver using depletion-mode a-IGZO TFTs," IEEE Electron Device Lett. 33, 402-404 (2012).

C. Liao, C. He, T. Chen, D. Dai, S. Chung, T. S. Jen, S. Zhang, "Implementation of an a-Si: H TFT gate driver using a five-transistor integrated approach," IEEE Trans. Electron Devices 59, 2142-2148 (2012).

2011 (3)

B. Kim, C. I. Ryoo, S. J. Kim, J. U. Bae, H. S. Seo, C. D. Kim, M. K. Han, "New depletion-mode IGZO TFT shift register," IEEE Electron Device Lett. 32, 158-160 (2011).

C. K. Kang, Y. S. Park, S. Park, Y. G. Mo, B. H. Kim, S. S. Kim, "Integrated scan driver with oxide TFTs using floating gate method," Proc. Soc. Inf. Display 25-27 (2011).

B. Kim, S. C. Choi, S. Y. Lee, S. H. Kuk, Y. H. Jang, C. D. Kim, M. K. Han, "A depletion-mode a-IGZO TFT shift register with a signal low-voltage-level power signal," IEEE Electron Device Lett. 32, 1092-1094 (2011).

2005 (1)

K. M. Lim, K. Lee, J. S. Yoo, J. M. Yoon, M. K. Baek, J. S. Yoo, Y. S. Jung, J. Park, S. W. Lee, H. Kang, C. D. Kim, I. J. Chung, "A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver including 6-bit DAC," Solid State Electron. 49, 1107-1111 (2005).

2004 (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

IEEE Electron Device Lett. (1)

S. J. Yoo, S. J. Hong, J. S. Kang, H. J. In, O. K. Kwon, "A low-power single-clock-driven scan driver using depletion-mode a-IGZO TFTs," IEEE Electron Device Lett. 33, 402-404 (2012).

IEEE Electron Device Lett. (2)

B. Kim, S. C. Choi, S. Y. Lee, S. H. Kuk, Y. H. Jang, C. D. Kim, M. K. Han, "A depletion-mode a-IGZO TFT shift register with a signal low-voltage-level power signal," IEEE Electron Device Lett. 32, 1092-1094 (2011).

B. Kim, C. I. Ryoo, S. J. Kim, J. U. Bae, H. S. Seo, C. D. Kim, M. K. Han, "New depletion-mode IGZO TFT shift register," IEEE Electron Device Lett. 32, 158-160 (2011).

IEEE Trans. Electron Devices (1)

C. Liao, C. He, T. Chen, D. Dai, S. Chung, T. S. Jen, S. Zhang, "Implementation of an a-Si: H TFT gate driver using a five-transistor integrated approach," IEEE Trans. Electron Devices 59, 2142-2148 (2012).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Proc. Soc. Inf. Display (1)

S. J. Hong, J. S. Kang, C. H. Lee, O. K. Kwon, "Low-power and small-sized scan driver using amorphous oxide TFTs," Proc. Soc. Inf. Display 1108-1111 (2012).

Proc. Soc. Inf. Display (1)

C. K. Kang, Y. S. Park, S. Park, Y. G. Mo, B. H. Kim, S. S. Kim, "Integrated scan driver with oxide TFTs using floating gate method," Proc. Soc. Inf. Display 25-27 (2011).

Solid State Electron. (1)

M. Li, L. Lan, M. Xu, D. Luo, P. Xiao, J. Peng, "Performance improvement of oxide thin-film transistors with a two-step-annealing method," Solid State Electron. 91, 9-12 (2014).

Solid State Electron. (1)

K. M. Lim, K. Lee, J. S. Yoo, J. M. Yoon, M. K. Baek, J. S. Yoo, Y. S. Jung, J. Park, S. W. Lee, H. Kang, C. D. Kim, I. J. Chung, "A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver including 6-bit DAC," Solid State Electron. 49, 1107-1111 (2005).

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