Abstract

The variation and reliability issues of display backplane pose major challenges for poly silicon (poly-Si) active matrix organic light-emitting diode (AMOLED) displays. Adjacent poly-Si thin-film transistors (TFTs) exhibit different threshold voltages and mobilities due to random distribution of grain boundaries (GBs). Furthermore, the threshold voltage and mobility of TFTs have noticeable shift in time because of electrical stress. In this study, we propose an improved voltage programming pixel circuit for compensating the shift of threshold voltage and mobility in driver TFTs (DTFTs) as well as compensating the supply voltage degradation. HSPICE simulation results demonstrate that the drive current for OLED has a deviation of less than $\pm$ 2% for a mobility variation of $\pm$ 40% and a maximum deviation of 30 nA when the threshold voltage varies from 0.3 to $-$ 0.3 V. Moreover, if the supply voltage degrades from 10 to 8.5 V, the drive current shift is less than 15%.

© 2014 IEEE

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  1. K.-Y. Chen, Y.-T. Hsiao, H. Y. Lin, M.-K. Wei, J.-H. Lee, "Partitioning pixel of organic light-emitting devices with center-hollowed microlens-array films for efficiency enhancement," Opt. Express 18, 18685 (2010).
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  6. C.-W. Lin, C.-T. Chao, Y.-S. Huang, "A novel pixel design for AM-OLED displays using nanocrystallince silicon TFTs," IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19, 939-952 (2011).
  7. C.-H. Ho, C. Lu, D. Mohapatra, K. Roy, "Variation-tolerant and self-repair design methodology for low temperature polycrystalline silicon liquid crystal and organic light emitting diode displays," Proc. 16th ASP-DAC (2011) pp. 695-700.
  8. T. Urabe, T. Sasaoka, K. Tatsuki, J. Takaki, "Technological evolution for large screen size active matrix OLED display," Proc. Int. Meeting on Inf. Display (2007) pp. 161-164.
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  10. C.-H. Ho, G. Panagopoulos, K. Roy, "A self-consistent electro-thermal model for analyzing NBTI effect in P-type poly-Si thin-film transistors," IEEE Trans. Electron Devices 60, 288-294 (2013).
  11. C.-W. Lin, "A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design," Proc. Int. Conf. Simulation of Semicond. Processes and Devices (2013) pp. 440-443.
  12. C.-H. Ho, G. Panagopoulos, C. Lu, K. Roy, "A physical model to predict the threshold voltage variation of poly-silicon thin-film transistors induced by grain boundaries," Proc. Int. Conf. Simulation of Semicond. Processes and Devices (2012) pp. 145-148.
  13. C.-H. Ho, G. Panagopoulos, K. Roy, "A 3-D physical model for grain boundary induced threshold voltage variation in poly-silicon thin-film transistors," IEEE Trans. Electron Devices 59, 2396-2402 (2012).
  14. S. Saxena, J. Jang, "Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors," IEEE Trans. Electron Devices 58, 2638-2643 (2011).
  15. J. Yamashita, K. Uchino, T. Yamamoto, T. Sasaoka, T. Urabe, "New driving method with current subtraction pixel circuit for AM-OLED displays," SID Symp. Dig. (2005) pp. 1452-1455.
  16. M. K. Han, "AM backplane for AMOLED," Proc. Symp. Inf. Display (2006) pp. 53-58.
  17. A. Giraldo, M. J. Childs, D. Fish, M. T. Johnson, M. Klein, H. Lifak, W. Oepts, W. A. Steer, N. D. Young, "Optical feedback in active matrix polymer OLED displays," Proc. IEEE LEOS (2003) pp. 529-530.
  18. H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).
  19. H. J. In, O. K. Kwon, "Simple pixel structure using video data correction method for nonuniform electrical characteristics of polycrystalline silicon thin-film transistors and differential aging phenomenon of organic light-emitting diodes," Jpn. J. Appl. Phys. 49, 03CD04-03CD04-5 (2010).
  20. K. C. Park, J. H. Jeon, Y. I. Kim, J. B. Choi, Y. J. Chang, Z. F. Zhan, C. W. Kim, "A poly-Si AMOLED display with high uniformity," Solid-State Electron. 52, 1691-1693 (2008).
  21. G. Palumbo, M. Pennisi, "AMOLED pixel driver circuits based on poly-Si TFTs: A comparison," Integration, the VLSI Journal 41, 439-446 (2008).
  22. HSPICE MOSFET Models Manual, Level 62 RPI Poly-Si TFT Model U-2003.03-PASynopsysMountain ViewCAUSA (2003) pp. 320-330.
  23. H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).
  24. Taurus Device Simulator Synopsys Inc.Mountain ViewCAUSA.
  25. Aurora User Guide Synopsys Inc.Mountain ViewCAUSA (2006).
  26. T. Ishibashi, "Active matrix organic light emitting diode display based on ‘super top emission’ technology," Jpn. J. Appl. Phys. 45, 4392-4395 (2006).

2013 (1)

C.-H. Ho, G. Panagopoulos, K. Roy, "A self-consistent electro-thermal model for analyzing NBTI effect in P-type poly-Si thin-film transistors," IEEE Trans. Electron Devices 60, 288-294 (2013).

2012 (1)

C.-H. Ho, G. Panagopoulos, K. Roy, "A 3-D physical model for grain boundary induced threshold voltage variation in poly-silicon thin-film transistors," IEEE Trans. Electron Devices 59, 2396-2402 (2012).

2011 (3)

S. Saxena, J. Jang, "Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors," IEEE Trans. Electron Devices 58, 2638-2643 (2011).

Y.-H. Lan, C.-H. Hsiao, P.-Y. Lee, Y.-C. Bai, C.-C. Lee, C.-C. Yang, M.-K. Leung, M.-K. Wei, T.-L. Chiu, J.-H. Lee, "Dopant effects in phosphorescent white organic light-emitting device with double-emitting layer," Organ. Electron. 12, 756 (2011).

C.-W. Lin, C.-T. Chao, Y.-S. Huang, "A novel pixel design for AM-OLED displays using nanocrystallince silicon TFTs," IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19, 939-952 (2011).

2010 (2)

K.-Y. Chen, Y.-T. Hsiao, H. Y. Lin, M.-K. Wei, J.-H. Lee, "Partitioning pixel of organic light-emitting devices with center-hollowed microlens-array films for efficiency enhancement," Opt. Express 18, 18685 (2010).

H. J. In, O. K. Kwon, "Simple pixel structure using video data correction method for nonuniform electrical characteristics of polycrystalline silicon thin-film transistors and differential aging phenomenon of organic light-emitting diodes," Jpn. J. Appl. Phys. 49, 03CD04-03CD04-5 (2010).

2008 (2)

K. C. Park, J. H. Jeon, Y. I. Kim, J. B. Choi, Y. J. Chang, Z. F. Zhan, C. W. Kim, "A poly-Si AMOLED display with high uniformity," Solid-State Electron. 52, 1691-1693 (2008).

G. Palumbo, M. Pennisi, "AMOLED pixel driver circuits based on poly-Si TFTs: A comparison," Integration, the VLSI Journal 41, 439-446 (2008).

2007 (1)

2006 (3)

H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).

T. Ishibashi, "Active matrix organic light emitting diode display based on ‘super top emission’ technology," Jpn. J. Appl. Phys. 45, 4392-4395 (2006).

H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).

2003 (1)

J.-J. Lih, C.-F. Sung, M. S. Weaver, M. Hack, J. J. Brown, "A phosphorescent active-matrix OLED display driven by amorphous silicon backplane," J. Soc. Inf. Display 34, 14-17 (2003).

IEEE Trans. Electron Devices (3)

C.-H. Ho, G. Panagopoulos, K. Roy, "A 3-D physical model for grain boundary induced threshold voltage variation in poly-silicon thin-film transistors," IEEE Trans. Electron Devices 59, 2396-2402 (2012).

S. Saxena, J. Jang, "Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors," IEEE Trans. Electron Devices 58, 2638-2643 (2011).

C.-H. Ho, G. Panagopoulos, K. Roy, "A self-consistent electro-thermal model for analyzing NBTI effect in P-type poly-Si thin-film transistors," IEEE Trans. Electron Devices 60, 288-294 (2013).

IEEE Trans. Very Large Scale Integr. (VLSI) Syst. (1)

C.-W. Lin, C.-T. Chao, Y.-S. Huang, "A novel pixel design for AM-OLED displays using nanocrystallince silicon TFTs," IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19, 939-952 (2011).

Integration, the VLSI Journal (1)

G. Palumbo, M. Pennisi, "AMOLED pixel driver circuits based on poly-Si TFTs: A comparison," Integration, the VLSI Journal 41, 439-446 (2008).

J. Display Technol. (1)

J. Soc. Inf. Display (1)

J.-J. Lih, C.-F. Sung, M. S. Weaver, M. Hack, J. J. Brown, "A phosphorescent active-matrix OLED display driven by amorphous silicon backplane," J. Soc. Inf. Display 34, 14-17 (2003).

Jpn. J. Appl. Phys. (4)

H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).

H. J. In, O. K. Kwon, "Simple pixel structure using video data correction method for nonuniform electrical characteristics of polycrystalline silicon thin-film transistors and differential aging phenomenon of organic light-emitting diodes," Jpn. J. Appl. Phys. 49, 03CD04-03CD04-5 (2010).

H. J. In, B. D. Choi, H. K. Chung, O. K. Kwon, "Current-sensing and voltage-feedback driving method for large-area high-resolution active matrix organic light emitting diodes," Jpn. J. Appl. Phys. 45, 4396-4401 (2006).

T. Ishibashi, "Active matrix organic light emitting diode display based on ‘super top emission’ technology," Jpn. J. Appl. Phys. 45, 4392-4395 (2006).

Opt. Express (1)

Organ. Electron. (1)

Y.-H. Lan, C.-H. Hsiao, P.-Y. Lee, Y.-C. Bai, C.-C. Lee, C.-C. Yang, M.-K. Leung, M.-K. Wei, T.-L. Chiu, J.-H. Lee, "Dopant effects in phosphorescent white organic light-emitting device with double-emitting layer," Organ. Electron. 12, 756 (2011).

Solid-State Electron. (1)

K. C. Park, J. H. Jeon, Y. I. Kim, J. B. Choi, Y. J. Chang, Z. F. Zhan, C. W. Kim, "A poly-Si AMOLED display with high uniformity," Solid-State Electron. 52, 1691-1693 (2008).

Other (12)

C.-W. Lin, "A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design," Proc. Int. Conf. Simulation of Semicond. Processes and Devices (2013) pp. 440-443.

C.-H. Ho, G. Panagopoulos, C. Lu, K. Roy, "A physical model to predict the threshold voltage variation of poly-silicon thin-film transistors induced by grain boundaries," Proc. Int. Conf. Simulation of Semicond. Processes and Devices (2012) pp. 145-148.

J. Yamashita, K. Uchino, T. Yamamoto, T. Sasaoka, T. Urabe, "New driving method with current subtraction pixel circuit for AM-OLED displays," SID Symp. Dig. (2005) pp. 1452-1455.

M. K. Han, "AM backplane for AMOLED," Proc. Symp. Inf. Display (2006) pp. 53-58.

A. Giraldo, M. J. Childs, D. Fish, M. T. Johnson, M. Klein, H. Lifak, W. Oepts, W. A. Steer, N. D. Young, "Optical feedback in active matrix polymer OLED displays," Proc. IEEE LEOS (2003) pp. 529-530.

R. Dawson, "The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays," IEEE Int. Electron Device Meeting Tech. Dig. (1998) pp. 875-878.

A. Giraldo, "Optical feedback in active matrix polymer OLED displays," Proc. IEEE LEOS (2003) pp. 529-530.

C.-H. Ho, C. Lu, D. Mohapatra, K. Roy, "Variation-tolerant and self-repair design methodology for low temperature polycrystalline silicon liquid crystal and organic light emitting diode displays," Proc. 16th ASP-DAC (2011) pp. 695-700.

T. Urabe, T. Sasaoka, K. Tatsuki, J. Takaki, "Technological evolution for large screen size active matrix OLED display," Proc. Int. Meeting on Inf. Display (2007) pp. 161-164.

Taurus Device Simulator Synopsys Inc.Mountain ViewCAUSA.

Aurora User Guide Synopsys Inc.Mountain ViewCAUSA (2006).

HSPICE MOSFET Models Manual, Level 62 RPI Poly-Si TFT Model U-2003.03-PASynopsysMountain ViewCAUSA (2003) pp. 320-330.

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