Abstract

The triple-targets magnetron co-sputtering system with three targets of In$_{2}$O$_{3}$, Ga$_{2}$O$_{3}$, and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The In$_{2}$O$_{3}$ RF power of 50 W, Ga$_{2}$O$_{3}$ RF power of 25 W and Zn DC power of 10$~$W were independently tuned to obtain the optimal composition $({In:Ga:Zn} = 3.5{:}1{:}2.7)$ of the a-IGZO films. The effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3 cm$^{2}$/V$\cdot$s, 6.5$\,\times\,$10$^{6}$, and 0.23 V/decade, respectively. Using the SiO$_{\rm x}$ passivation and thermal-annealing treatment, the effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5 cm$^{2}$/V$\cdot$s, 7.0$\times$10$^{6}$, and 0.22 V/decade, respectively. In addition, stable performances were also noted.

© 2014 IEEE

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  1. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.
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2008

W. Lim, Y. L. Wang, F. Ren, D. P. Norton, I. I. Kravchenko, J. M. Zavada, S. J. Pearton, "Indium zinc oxide thin films deposited by sputtering at room temperature," Appl. Surf. Sci. 254, 2878-2881 (2008).

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

W. Lim, S. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko, "High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering," J. Electrochem. Soc. 155, H383-H385 (2008).

2007

J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, H. D. Kim, "High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel," Appl. Phys. Lett. 91, (2007) Art. ID 113505.

D. Guo, T. Miyadera, S. Ikeda, T. Shimada, K. Saiki, "Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance," J. Appl. Phys. 102, (2007) Art. ID 023706.

Y. L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Peaton, I. I. Kravchenko, J. M. Zavada, "Room temperature deposited indium zinc oxide thin film transistors," Appl. Phys. Lett. 90, (2007) Art. ID 232103.

P. Görrn, P. Hölzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, S. Kipp, "Stability of transparent zinc tin oxide transistors under bias stress," Appl. Phys. Lett. 90, (2007) Art. ID 063502.

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, (2007) Art. ID 044505.

2006

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, "High-mobility thin-film transistor with amorphous InGaZnO $_{4}$ channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett. 89, (2006) Art. ID 112123.

2005

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.

B. Kumar, H. Gong, R. Akkipeddi, "A study of conduction in the transition zone between homologous and ZnO-rich regions in the In $_{2}$ O $_{3}$ -ZnO system," J. Appl. Phys. 97, (2005) Art. ID 063706.

2004

K. Nomura, H. Ohta, A. Takagi, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

1989

M. Shur, M. Hack, J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys. 66, 3371-3380 (1989).

Appl. Phys. Lett.

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.

Appl. Phys. Lett.

P. Görrn, P. Hölzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, S. Kipp, "Stability of transparent zinc tin oxide transistors under bias stress," Appl. Phys. Lett. 90, (2007) Art. ID 063502.

Y. L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Peaton, I. I. Kravchenko, J. M. Zavada, "Room temperature deposited indium zinc oxide thin film transistors," Appl. Phys. Lett. 90, (2007) Art. ID 232103.

H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, "High-mobility thin-film transistor with amorphous InGaZnO $_{4}$ channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett. 89, (2006) Art. ID 112123.

J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, H. D. Kim, "High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel," Appl. Phys. Lett. 91, (2007) Art. ID 113505.

Appl. Surf. Sci.

W. Lim, Y. L. Wang, F. Ren, D. P. Norton, I. I. Kravchenko, J. M. Zavada, S. J. Pearton, "Indium zinc oxide thin films deposited by sputtering at room temperature," Appl. Surf. Sci. 254, 2878-2881 (2008).

J. Appl. Phys.

B. Kumar, H. Gong, R. Akkipeddi, "A study of conduction in the transition zone between homologous and ZnO-rich regions in the In $_{2}$ O $_{3}$ -ZnO system," J. Appl. Phys. 97, (2005) Art. ID 063706.

J. Electrochem. Soc.

W. Lim, S. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko, "High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering," J. Electrochem. Soc. 155, H383-H385 (2008).

J. Appl. Phys.

D. Guo, T. Miyadera, S. Ikeda, T. Shimada, K. Saiki, "Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance," J. Appl. Phys. 102, (2007) Art. ID 023706.

M. Shur, M. Hack, J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys. 66, 3371-3380 (1989).

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 101, (2007) Art. ID 044505.

Nature

K. Nomura, H. Ohta, A. Takagi, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Thin Solid Films

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

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