Abstract

In the paper, an optical design for a standard light source is proposed and demonstrated to perform high stability, high angular CCT (correlated color temperature) uniformity, and adjustable light pattern from a Lambertian-like pattern to a narrow light pattern with a full-width at half-maximum (FWHM) angle of 60$^\circ$. The optical module contains a color-mixing cylinder, a diffuser, and an absorbed cylinder. The simulation well predicts the corresponding measurements and the angular CCT deviation can be kept a certain low level, which is much lower than a general phosphor converted white LED. In addition, we apply a pcW-LED of CREE XML as the light source to the optical module to show the general adoptability of the optical module. The measurement shows that the similar behavior, with adjustable light pattern from 120$^{\circ}$ to 60$^{\circ}$. In addition, the angular correlated color temperature deviation (ACCTD) is always kept an extremely low level.

© 2014 IEEE

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2013 (4)

D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar $(20\overline{21})$ InGaN/GaNlight-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).

J. Zhang, N. Tansu, "Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates," IEEE Photon. J. 5, 2600111 (2013).

G. Y. Liu, J. Zhang, C. K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 9, (2013) Art. ID 2201011.

H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, "Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes," J. Display Technol. 9, 212-225 (2013).

2012 (2)

S. Choi, M. H. Ji, J. Kim, H. J. Kim, M. M. Satter, P. D. Yoder, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers," Appl. Phys. Lett. 101, (2012) Art. ID 161110.

C. C. Sun, C. Y. Chen, C. C. Chen, C. Y. Chiu, Y. N. Peng, Y. H. Wang, C. Y. Chung, T. H. Yang, T. Y. Chung, "High uniformity in angular correlated-color-temperature distribution of white LEDs from 2800K to 6500K," Opt. Exp. 20, 6622-6630 (2012).

2011 (1)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Exp. 19, A991-A1007 (2011).

2010 (1)

N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, Y. K. Ee, "III-Nitride photonics," IEEE Photon. J. 2, 241-248 (2010).

2009 (1)

M. H. Crawford, "LEDs for solid state lighting: Performance challenges and recent advances," IEEE J. Sel. Topics Quantum Electron. 15, 1028-1040 (2009).

2007 (1)

M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, "High temperature electro-optical degradation of InGaN/GaN HBLEDs," Microelect. Rel. 47, 1625-1629 (2007).

2005 (2)

T. X. Lee, C. Y. Lin, S. H. Ma, C. C. Sun, "Analysis of position-dependent light extraction of GaN-based LEDs," Opt. Exp. 13, 4175-4179 (2005).

E. F. Schubert, J. K. Kim, "Solid-state light sources becoming smart," Science 308, 1274-1278 (2005).

2004 (3)

M. Arik, C. Becker, S. Weaver, J. Petroski, "Thermal management of LEDs: Package to system," Proc. SPIE 5187, 64-75 (2004).

C. C. Miller, Y. Zong, Y. Ohno, "LED photometric calibrations at the National Institute of Standards and Technology and future measurement needs of LEDs," Proc. SPIE 5530, 69-79 (2004).

C. C. Sun, C. Y. Lin, T. X. Lee, T. H. Yang, "Enhancement of light extraction of GaN-based LED with introducing micro-structure array," Opt. Eng. 43, 1700-1701 (2004).

1963 (1)

Appl. Opt. (1)

Appl. Phys. Lett. (1)

S. Choi, M. H. Ji, J. Kim, H. J. Kim, M. M. Satter, P. D. Yoder, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers," Appl. Phys. Lett. 101, (2012) Art. ID 161110.

IEEE J. Sel. Topics Quantum Electron. (1)

M. H. Crawford, "LEDs for solid state lighting: Performance challenges and recent advances," IEEE J. Sel. Topics Quantum Electron. 15, 1028-1040 (2009).

IEEE Photon. J. (1)

J. Zhang, N. Tansu, "Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates," IEEE Photon. J. 5, 2600111 (2013).

IEEE Photon. J. (2)

N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, Y. K. Ee, "III-Nitride photonics," IEEE Photon. J. 2, 241-248 (2010).

G. Y. Liu, J. Zhang, C. K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 9, (2013) Art. ID 2201011.

J. Display Technol. (2)

H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, "Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes," J. Display Technol. 9, 212-225 (2013).

D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar $(20\overline{21})$ InGaN/GaNlight-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).

Microelect. Rel. (1)

M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni, "High temperature electro-optical degradation of InGaN/GaN HBLEDs," Microelect. Rel. 47, 1625-1629 (2007).

Opt. Eng. (1)

C. C. Sun, C. Y. Lin, T. X. Lee, T. H. Yang, "Enhancement of light extraction of GaN-based LED with introducing micro-structure array," Opt. Eng. 43, 1700-1701 (2004).

Opt. Exp. (3)

T. X. Lee, C. Y. Lin, S. H. Ma, C. C. Sun, "Analysis of position-dependent light extraction of GaN-based LEDs," Opt. Exp. 13, 4175-4179 (2005).

C. C. Sun, C. Y. Chen, C. C. Chen, C. Y. Chiu, Y. N. Peng, Y. H. Wang, C. Y. Chung, T. H. Yang, T. Y. Chung, "High uniformity in angular correlated-color-temperature distribution of white LEDs from 2800K to 6500K," Opt. Exp. 20, 6622-6630 (2012).

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Exp. 19, A991-A1007 (2011).

Proc. SPIE (2)

M. Arik, C. Becker, S. Weaver, J. Petroski, "Thermal management of LEDs: Package to system," Proc. SPIE 5187, 64-75 (2004).

C. C. Miller, Y. Zong, Y. Ohno, "LED photometric calibrations at the National Institute of Standards and Technology and future measurement needs of LEDs," Proc. SPIE 5530, 69-79 (2004).

Science (1)

E. F. Schubert, J. K. Kim, "Solid-state light sources becoming smart," Science 308, 1274-1278 (2005).

Other (6)

A. Zukauskas, M. S. Shur, R. Caska, Introduction to Solid-state Lighting. (Wiley, 2002) pp. 117-130.

“LED inside,” (2009) http://www.ledinside.com.tw/knowledge/20090909-8979.html.

“European commission,” (2013) http://ec.europa.eu/news/energy/090901_en.htm.

“Australian Customs notice no. 2009/04,” (2009) http://www.customs.gov.au/web data/resources/notices/acn0904.pdf.

M. Arik, J. Petroski, S. Weaver, "Thermal challenges in the future generation solid-state lighting applications: Light emitting diodes," Proc. ASME/IEEE ITHERM Conf. (2002) pp. 113-120.

S. Shionoya, W. M. Yen, Phosphor Handbook. (CRC, 1999) pp. 347-353.

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