Abstract

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick ${p-In}_{0.01}{Ga}_{0.99}{N}$ layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

© 2013 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. T. Mukai, M. Yamada, S. Nakamura, "Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys. 38, 3976-3981 (1999).
  2. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Topics Quantum Electron. 8, 278-283 (2002).
  3. C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, G. C. Chi, "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures," Appl. Phys. Lett. 89, (2006) Art. ID 191112.
  4. C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi, "Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers," Appl. Phys. Lett. 89, (2006) Art. ID 201104.
  5. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J Appl. Phys. 41, (2002) Art. ID L1431.
  6. C. H. Kuo, L. C. Chang, C. W. Kuo, C. J. Tun, "Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template," IEEE Photon. Technol. Lett. 21, 257-259 (2010).
  7. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93, (2008) Art. ID 041102.
  8. D. F. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar 2021 InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).
  9. R. M. Farrell1, E. C. Young1, F. Wu1, S. P. DenBaars1, J. S. Speck1, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol 27, (2012) Art. ID 024001.
  10. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Exp. 19, (2011) Art. ID 9911007.
  11. R. A. Arif, Y.-K. Ee, N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett. 91, (2007) Art. ID 091110.
  12. H. Zhao, R. A. Arif, N. Tansu, "Self-consistent gain analysis of type-II ‘W’ InGaN-GaNAs quantum well lasers," J. Appl. Phys. 104, (2008) Art. ID 043104.
  13. C. H. Kuo, Y. K. Fu, G. C. Chi, S. J. Chang, "Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step," IEEE J. Quantum Electron. 46, 391-395 (2010).
  14. J. H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, "Control of quantum-cofined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes," Appl. Phys. Lett. 92, (2008) Art. ID 101113.
  15. S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride-based visible light emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett. 96, (2010) Art. ID 221105.
  16. H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, "Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes," J. Display Technol. 9, 212-225 (2013).
  17. I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. ID 032117.
  18. G. Liu, J. Zhang, C.-K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 5, (2013) Art. ID 2201011.
  19. Y. K. Kuo, M. C. Tsai, S. H. Yen, T. C. Hsu, Y. J. Shen, "Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes," IEEE J. Quantum Electron. 46, 1214-1220 (2010).
  20. J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, S. C. Wang, "Study of InGaN-GaN light-emitting diodes with different last barrier thickness," IEEE Photon. Technol. Lett. 22, 860-862 (2010).
  21. T. Suski, G. Staszczak, S. Grzanka, R. Czerneck, E. L. Staszewska, R. Piotrzkowski, L. H. Dmoski, A. Khachapuridze, M. Krysko, P. Perlin, I. Grzegory, "Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates," Appl. Phys. Lett. 108, (2010) Art. ID 023516.
  22. J. B. Limb, W. Lee, J. H. Ryou, D. Yoo, R. D. Dupuis, "Comparison of GaN and ${\hbox{In}}_{0.04}{\hbox{Ga}}_{0.96}{\hbox{N}}$$p$-layers on the electrical and electroluminescence properties of green light emitting diodes," J. Electron. Mater. 36, 426-430 (2007).
  23. S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer," IEEE Trans. Electron Devices 50, 2567-2570 (2003).
  24. C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, U. H. Liaw, "High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures," IEEE Electron Device Lett. 23, 130-132 (2002).
  25. Y. K. Kuo, Y. H. Shih, M. C. Tasi, "Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier," IEEE Photon. Technol. Lett. 23, 1630-1632 (2011).

2013 (3)

D. F. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar 2021 InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).

H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, "Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes," J. Display Technol. 9, 212-225 (2013).

G. Liu, J. Zhang, C.-K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 5, (2013) Art. ID 2201011.

2012 (2)

I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. ID 032117.

R. M. Farrell1, E. C. Young1, F. Wu1, S. P. DenBaars1, J. S. Speck1, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol 27, (2012) Art. ID 024001.

2011 (2)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Exp. 19, (2011) Art. ID 9911007.

Y. K. Kuo, Y. H. Shih, M. C. Tasi, "Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier," IEEE Photon. Technol. Lett. 23, 1630-1632 (2011).

2010 (6)

Y. K. Kuo, M. C. Tsai, S. H. Yen, T. C. Hsu, Y. J. Shen, "Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes," IEEE J. Quantum Electron. 46, 1214-1220 (2010).

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, S. C. Wang, "Study of InGaN-GaN light-emitting diodes with different last barrier thickness," IEEE Photon. Technol. Lett. 22, 860-862 (2010).

T. Suski, G. Staszczak, S. Grzanka, R. Czerneck, E. L. Staszewska, R. Piotrzkowski, L. H. Dmoski, A. Khachapuridze, M. Krysko, P. Perlin, I. Grzegory, "Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates," Appl. Phys. Lett. 108, (2010) Art. ID 023516.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride-based visible light emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett. 96, (2010) Art. ID 221105.

C. H. Kuo, L. C. Chang, C. W. Kuo, C. J. Tun, "Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template," IEEE Photon. Technol. Lett. 21, 257-259 (2010).

C. H. Kuo, Y. K. Fu, G. C. Chi, S. J. Chang, "Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step," IEEE J. Quantum Electron. 46, 391-395 (2010).

2008 (3)

J. H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, "Control of quantum-cofined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes," Appl. Phys. Lett. 92, (2008) Art. ID 101113.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93, (2008) Art. ID 041102.

H. Zhao, R. A. Arif, N. Tansu, "Self-consistent gain analysis of type-II ‘W’ InGaN-GaNAs quantum well lasers," J. Appl. Phys. 104, (2008) Art. ID 043104.

2007 (2)

R. A. Arif, Y.-K. Ee, N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett. 91, (2007) Art. ID 091110.

J. B. Limb, W. Lee, J. H. Ryou, D. Yoo, R. D. Dupuis, "Comparison of GaN and ${\hbox{In}}_{0.04}{\hbox{Ga}}_{0.96}{\hbox{N}}$$p$-layers on the electrical and electroluminescence properties of green light emitting diodes," J. Electron. Mater. 36, 426-430 (2007).

2006 (2)

C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, G. C. Chi, "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures," Appl. Phys. Lett. 89, (2006) Art. ID 191112.

C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi, "Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers," Appl. Phys. Lett. 89, (2006) Art. ID 201104.

2003 (1)

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer," IEEE Trans. Electron Devices 50, 2567-2570 (2003).

2002 (3)

C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, U. H. Liaw, "High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures," IEEE Electron Device Lett. 23, 130-132 (2002).

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J Appl. Phys. 41, (2002) Art. ID L1431.

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Topics Quantum Electron. 8, 278-283 (2002).

1999 (1)

T. Mukai, M. Yamada, S. Nakamura, "Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys. 38, 3976-3981 (1999).

AIP Advances (1)

I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. ID 032117.

Appl. Phys. Lett. (1)

J. H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, "Control of quantum-cofined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes," Appl. Phys. Lett. 92, (2008) Art. ID 101113.

Appl. Phys. Lett. (6)

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride-based visible light emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett. 96, (2010) Art. ID 221105.

R. A. Arif, Y.-K. Ee, N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett. 91, (2007) Art. ID 091110.

C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, G. C. Chi, "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures," Appl. Phys. Lett. 89, (2006) Art. ID 191112.

C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi, "Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers," Appl. Phys. Lett. 89, (2006) Art. ID 201104.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93, (2008) Art. ID 041102.

T. Suski, G. Staszczak, S. Grzanka, R. Czerneck, E. L. Staszewska, R. Piotrzkowski, L. H. Dmoski, A. Khachapuridze, M. Krysko, P. Perlin, I. Grzegory, "Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates," Appl. Phys. Lett. 108, (2010) Art. ID 023516.

IEEE Electron Device Lett. (1)

C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, U. H. Liaw, "High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures," IEEE Electron Device Lett. 23, 130-132 (2002).

IEEE Photon. Technol. Lett. (2)

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, S. C. Wang, "Study of InGaN-GaN light-emitting diodes with different last barrier thickness," IEEE Photon. Technol. Lett. 22, 860-862 (2010).

C. H. Kuo, L. C. Chang, C. W. Kuo, C. J. Tun, "Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template," IEEE Photon. Technol. Lett. 21, 257-259 (2010).

IEEE J. Quantum Electron. (1)

C. H. Kuo, Y. K. Fu, G. C. Chi, S. J. Chang, "Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting diode with a low indium content InGaN shallow step," IEEE J. Quantum Electron. 46, 391-395 (2010).

IEEE J. Quantum Electron. (1)

Y. K. Kuo, M. C. Tsai, S. H. Yen, T. C. Hsu, Y. J. Shen, "Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes," IEEE J. Quantum Electron. 46, 1214-1220 (2010).

IEEE J. Sel. Topics Quantum Electron. (1)

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Topics Quantum Electron. 8, 278-283 (2002).

IEEE Photon. J. (1)

G. Liu, J. Zhang, C.-K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 5, (2013) Art. ID 2201011.

IEEE Photon. Technol. Lett. (1)

Y. K. Kuo, Y. H. Shih, M. C. Tasi, "Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier," IEEE Photon. Technol. Lett. 23, 1630-1632 (2011).

IEEE Trans. Electron Devices (1)

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer," IEEE Trans. Electron Devices 50, 2567-2570 (2003).

J. Appl. Phys. (1)

H. Zhao, R. A. Arif, N. Tansu, "Self-consistent gain analysis of type-II ‘W’ InGaN-GaNAs quantum well lasers," J. Appl. Phys. 104, (2008) Art. ID 043104.

J. Display Technol. (2)

H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, "Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes," J. Display Technol. 9, 212-225 (2013).

D. F. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar 2021 InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).

J. Electron. Mater. (1)

J. B. Limb, W. Lee, J. H. Ryou, D. Yoo, R. D. Dupuis, "Comparison of GaN and ${\hbox{In}}_{0.04}{\hbox{Ga}}_{0.96}{\hbox{N}}$$p$-layers on the electrical and electroluminescence properties of green light emitting diodes," J. Electron. Mater. 36, 426-430 (2007).

Jpn. J. Appl. Phys. (1)

T. Mukai, M. Yamada, S. Nakamura, "Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes," Jpn. J. Appl. Phys. 38, 3976-3981 (1999).

Jpn. J Appl. Phys. (1)

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J Appl. Phys. 41, (2002) Art. ID L1431.

Opt. Exp. (1)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Exp. 19, (2011) Art. ID 9911007.

Semicond. Sci. Technol (1)

R. M. Farrell1, E. C. Young1, F. Wu1, S. P. DenBaars1, J. S. Speck1, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol 27, (2012) Art. ID 024001.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.