Abstract

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick ${p-In}_{0.01}{Ga}_{0.99}{N}$ layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

© 2013 IEEE

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