Abstract

The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.

© 2013 IEEE

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