Abstract
Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting
diodes to numerically investigate the efficiency droop mechanism by using the APSYS simulation
software. It is found that gradually reducing aluminum (Al) composition in the growth direction of
the AlGaN staircase EBL can improve light output power, lower current leakage, and efficiency
droop. To the contrary, increasing the Al composition in the staircase EBL along the growth
direction will aggravate the electron leakage and efficiency droop. These distinct features are
attributed mainly to discrepancy energy band tailoring in the EBL region, and finally different
electron blocking efficiency.
© 2014 IEEE
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