Abstract
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors
(LTPS TFTs) are emerging as promising devices for low-cost applications owing
to their low manufacturing cost. Since LTPS TFTs can be fabricated on the
insulating substrates such as plastic or glass, on-chip spiral inductors achieve
high quality of characteristic. In this paper, we observed that inductors
using LTPS TFT technology have a 14% higher
$Q$
-factor and a 16% higher self-resonance
frequency compared to corresponding CMOS-bulk technology from electromagnetic
(EM) simulation. It allows compensating low trans-conductance
$({g}_{m})$
of LTPS TFTs due to inherent
grain boundaries (GBs) in the poly-Si channel. With the properly optimized
dimension of LTPS TFT technology, we designed a low-noise amplifier (LNA)
on glass substrate having a
${\rm
gain}= 15.4~{{dB}}$
, noise figure
$({\rm NF})=2.8~{{dB}}$
, and third-order
input intercept point
$({\rm
IIP3})= 3.9~{{dBm}}$
at 2.4 GHz with a 2 V voltage supply.
The results demonstrate that low-cost RF design with LTPS TFTs can achieve
CMOS-like performance.
© 2014 IEEE
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