Abstract
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors
(LTPS TFTs) are emerging as promising devices for low-cost applications owing
to their low manufacturing cost. Since LTPS TFTs can be fabricated on the
insulating substrates such as plastic or glass, on-chip spiral inductors achieve
high quality of characteristic. In this paper, we observed that inductors
using LTPS TFT technology have a 14% higher
$Q$
-factor and a 16% higher self-resonance
frequency compared to corresponding CMOS-bulk technology from electromagnetic
(EM) simulation. It allows compensating low trans-conductance
$({g}_{m})$
of LTPS TFTs due to inherent
grain boundaries (GBs) in the poly-Si channel. With the properly optimized
dimension of LTPS TFT technology, we designed a low-noise amplifier (LNA)
on glass substrate having a
${\rm
gain}= 15.4~{{dB}}$
, noise figure
$({\rm NF})=2.8~{{dB}}$
, and third-order
input intercept point
$({\rm
IIP3})= 3.9~{{dBm}}$
at 2.4 GHz with a 2 V voltage supply.
The results demonstrate that low-cost RF design with LTPS TFTs can achieve
CMOS-like performance.
© 2014 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy