Abstract
Solution processed bottom-gate bottom-contact organic thin-film transistors
(OTFTs) being able to sustain hybrid low/high voltage operation were realized
with the maximum processing temperature not exceeding 100
$^{\circ}$
C. In the devices, a channel
engineering approach is used to achieve low voltage operation, by inducing
phase separation with the blend of 6, 13-bis(triisopropylsilylethynyl)-pentacene
and polystyrene to form an ultra-thin high crystalline channel. Since the
approach doesn't rely on enlarging the gate dielectric capacitance, the low
voltage OTFT with a relatively thick dielectric layer was shown to be able
to sustain high voltage operation. Moreover, the ultra-small dielectric capacitance
can help to reduce the parasitic capacitance in the data and scan lines of
the display panel. The device technology is shown to be promising for developing
flexible/rollable display systems on plastic substrates, where a relatively
high voltage is required for the pixel driving circuits, and a low voltage
is preferred for the logic circuits in the peripheral drivers.
© 2014 IEEE
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