Abstract

In this study, the electrode structure of Gallium nitride (GaN)-based light-emitting diodes (LEDs) was investigated to improve their antielectrostatic discharge (anti-ESD) ability. The test results indicated that a strong correlation exists between the ESD immunity level of GaN-based blue LEDs and their electrode structure. The proposed LED design features a long parallel extension of the p- and n-electrode areas to facilitate the uniform distribution of ESD current and enhance the anti-ESD abilities. Compared with the standard reference group, the antireverse and antiforward modes of ESD in the experimental group were, respectively, 29% and 171% more than those in a standard reference group, which could enhance the reverse-mode and forward-mode ESD immunity of GaN-based LEDs. Therefore, using LEDs based on the optimal design of p- and n-electrode areas is an excellent strategy for enhancing anti-ESD ability without altering processing conditions.

© 2014 IEEE

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