Abstract

Even though light-emitting diodes (LEDs) may have a very long life, poorly designed LED lighting systems can experience a short life. Because heat at the p-n-junction is one of the main factors that affect the life of the LED, by knowing the relationship between life and heat, LED system manufacturers can design and build long-lasting systems. In this study, several white LEDs from the same manufacturer were subjected to life tests at different ambient temperatures. The exponential decay of light output as a function of time provided a convenient method to rapidly estimate life by data extrapolation. The life of these LEDs decreases in an exponential manner with increasing temperature. In a second experiment,several high-power white LEDs from different manufacturers were life-tested under similar conditions. Results show that the different products have significantly different life values.

© 2005 IEEE

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References

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Other (11)

M. S. Rea, The IESNA Lighting Handbook, ninth ed. New York: Illum. Eng. Soc. of North America, 2000.

(2005, "ASSIST Recommends: LED Life for General Lighting",

S. Nakamura, T. Mukai and M. Senoh, "Candela-class high brightness InGaN/AlGaN double-heterostructure blue-light-emitting-diodes", Appl. Phys. Lett., vol. 64, pp. 1687-1689, Mar. 1994.

N. Narendran, J. Bullough, N. Maliyagoda and A. Bierman, "What is useful life for white light LEDs?", J. Illum. Eng. Soc., vol. 30, no. 1, pp. 57-67, Winter 2001.

N. Narendran, L. Deng, R. M. Pysar, Y. Gu and H. Yu, "Performance characteristics of high-power light-emitting diodes", in Proc. SPIE Third Int. Conf. on Solid State Lighting, vol. 5187, San Diego, CA, 2003, pp. 267-275.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin and S. Rudaz, "Illumination with solid state lighting technology", IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 310-320, Mar./Apr. 2002.

D. L. Barton, M. Osinski, P. Perlin, C. J. Helms and N. H. Berg, "Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes", in Proc. SPIE, vol. 3279, San Jose, CA, 1998, pp. 17-27.

G. Meneghesso, S. Levada, E. Zanini, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du and I. Eliashevich, "Failure modes and mechanisms of DC-aged GaN LEDs", Phys. Stat. Sol. (a), vol. 194, no. 2, pp. 389-392, 2002.

F. Manyakhin, A. Kovalev and A. E. Yunovich, "Aging mechanisms of InGaN/AlGaN/GaN light emitting diodes operating at high currents", MRS Internet J. Nitride Semicond. Res., vol. 3, p. 53, 1998.

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu and L. Deng, "Solid-state lighting: failure analysis of white LEDs", J. Cryst. Growth, vol. 268, no. 3-4, pp. 449-456, Aug. 2004.

Y. Gu and N. Narendran, "A noncontact method for determining junction temperature of phosphor-converted white LEDs", in Proc. SPIE Third Int. Conf. on Solid State Lighting, vol. 5187, San Diego, CA, 2003, pp. 107-114.

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