Abstract
A perpendicular InGaN/GaN multiple-quantum- wells structure on ZnO substrate for
blue light emitting diode (LED) was successfully fabricated by use of Metal-organic
Chemical Vapor Deposition (MOCVD). During the growing process of GaN-based materials on
ZnO substrates, the low-temperature-grown GaN buffer layer, inserted between ZnO
substrate and undoped GaN layer, prevented the Zn and O from diffusing from ZnO
substrate into the n-GaN layer. This thin GaN buffer layer, mainly as a insulating
layer, was grown at relatively low temperature of 530 °C. By using our
method, an integrated LED with ZnO substrate can be fabricated with a crack-free GaN
film on (0001) ZnO substrate by MOCVD using this method. The epilayer crystalline
structure has been measured by atomic force microscopy (AFM), and the optical properties
of the LED were also characterized by photoluminescence and Current-Voltage
characteristic curve.
© 2013 IEEE
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