Abstract

InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields and suffer from significantly reduced radiative recombination rates. A reduced polarization within the device can improve the optical matrix element, thereby enhancing the optical output power and efficiency. Here, we have demonstrated computationally that the step-doping in the quantum barriers is effective in reducing the polarization-induced fields and lowering the energy barrier for hole transport. Also, we have proven experimentally that such InGaN/GaN LEDs with Si step-doped quantum barriers indeed outperform LEDs with wholly Si-doped barriers and those without doped barriers in terms of output power and external quantum efficiency. The consistency of our numerical simulation and experimental results indicate the effects of Si step-doping in suppressing quantum-confined stark effect and enhancing the hole injection, and is promising in improving the InGaN/GaN LED performance.

© 2012 IEEE

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