Abstract

A new level shifter circuit suitable for implementation using n-channel oxide thin-film transistors (TFTs) is reported. This level shifter is designed to convert a single 10 V input signal into a 20 V output signal. In order to raise the output voltage up to <i>V</i><sub>DD</sub> in spite of the large zero-<i>V</i><sub>GS</sub> current of the oxide TFT, negative <i>V</i><sub>GS</sub> is applied to the pull-down TFTs. Simulation and fabrication results show that the level shifter operates correctly with oxide TFTs and that the power consumption is as low as 0.2 mW at an input signal frequency of 10 kHz.

© 2013 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription