Abstract

A new level shifter circuit suitable for implementation using n-channel oxide thin-film transistors (TFTs) is reported. This level shifter is designed to convert a single 10 V input signal into a 20 V output signal. In order to raise the output voltage up to <i>V</i><sub>DD</sub> in spite of the large zero-<i>V</i><sub>GS</sub> current of the oxide TFT, negative <i>V</i><sub>GS</sub> is applied to the pull-down TFTs. Simulation and fabrication results show that the level shifter operates correctly with oxide TFTs and that the power consumption is as low as 0.2 mW at an input signal frequency of 10 kHz.

© 2013 IEEE

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  1. H.-H. Hsieh, H.-H. Lu, H.-C. Ting, C.-S. Chuang, C.-Y. Chen, Y. Lin, "Development of IGZO TFTs and their applications to next-generation flat-panel displays," J. Inf. Display 11, 160-164 (2010).
  2. M. Mativenga, J. W. Choi, J. H. Hur, H. J. Kim, J. Jang, "Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure," J. Inf. Display 12, 47-50 (2011).
  3. N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang, J. Park, K. Park, H. Jeong, Y. Ha, Y. Hwang, "Implementation of 240 Hz 55—Inch ultra definition LCD driven by a-IGZO semiconductor TFT with copper signal lines," Soc. Inf. Display 2012 Int. Symp. Dig. Tech. Papers (2012) pp. 784-787.
  4. T. Arai, "Oxide-TFT technologies for next-generation AMOLED display ys," J. Soc. Inf. Display 20, 156-161 (2012).
  5. R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Circuits using uniform TFTs based on amorphous In-Ga-Zn-O," J. Soc. Inf. Display 15, 915-921 (2007).
  6. B. Kim, S. C. Choi, S.-H. Kuk, Y. H. Jang, K.-S. Park, C.-D. Kim, M.-K. Han, "A novel level shifter employing IGZO TFT," IEEE Electron Device Lett. 32, 167-169 (2011).
  7. M. W. Oh, H. G. Leem, S. M. Yoon, C. W. Byun, S. H. K. Park, H. S. Oh, K. C. Park, "Charge pump circuit for depletion-mode oxide TFTs," Electron. Lett. 47, 378-380 (2011).
  8. J. E. Pi, C. S. Hwang, S. H. Yang, S. H. K. Park, S. M. Yoon, H. K. Leem, Y. K. Kim, J. D. Kim, H. S. Oh, K. C. Park, "A low-power scan driver circuit for oxide TFTs," IEEE Electron Device Lett. 33, 1144-1146 (2012).
  9. H. Oh, S.-M. Yoon, M. K. Ryu, C.-S. Hwang, S. Yang, S.-H. K. Park, "Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor," Appl. Phys. Lett. 97, 183502-183502 (2010).
  10. K. W. Lee, H. S. Shin, K. Y. Heo, K. M. Kim, H. J. Kim, "Light effects of the amorphous indium gallium zinc oxide tin-film transistor," J. Inf. Display 10, 171-174 (2009).
  11. S. Kim, S. Kim, C. Kim, J. C. Park, I. Song, S. Jeon, S.-E. Ahn, J.-S. Park, J.-K. Jeong, "The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors," Solid State Electron. 62, 77-81 (2011).
  12. S.-H. K. Park, M.-K. Ryu, S.-M. Yoon, S. Yang, C.-S. Hwang, J.-H. Jeon, "Device reliability under electrical stress and photo response of oxide TFTs," J. Soc. Inf. Display 18, 779-788 (2010).

2012

T. Arai, "Oxide-TFT technologies for next-generation AMOLED display ys," J. Soc. Inf. Display 20, 156-161 (2012).

J. E. Pi, C. S. Hwang, S. H. Yang, S. H. K. Park, S. M. Yoon, H. K. Leem, Y. K. Kim, J. D. Kim, H. S. Oh, K. C. Park, "A low-power scan driver circuit for oxide TFTs," IEEE Electron Device Lett. 33, 1144-1146 (2012).

2011

B. Kim, S. C. Choi, S.-H. Kuk, Y. H. Jang, K.-S. Park, C.-D. Kim, M.-K. Han, "A novel level shifter employing IGZO TFT," IEEE Electron Device Lett. 32, 167-169 (2011).

M. W. Oh, H. G. Leem, S. M. Yoon, C. W. Byun, S. H. K. Park, H. S. Oh, K. C. Park, "Charge pump circuit for depletion-mode oxide TFTs," Electron. Lett. 47, 378-380 (2011).

M. Mativenga, J. W. Choi, J. H. Hur, H. J. Kim, J. Jang, "Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure," J. Inf. Display 12, 47-50 (2011).

S. Kim, S. Kim, C. Kim, J. C. Park, I. Song, S. Jeon, S.-E. Ahn, J.-S. Park, J.-K. Jeong, "The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors," Solid State Electron. 62, 77-81 (2011).

2010

S.-H. K. Park, M.-K. Ryu, S.-M. Yoon, S. Yang, C.-S. Hwang, J.-H. Jeon, "Device reliability under electrical stress and photo response of oxide TFTs," J. Soc. Inf. Display 18, 779-788 (2010).

H.-H. Hsieh, H.-H. Lu, H.-C. Ting, C.-S. Chuang, C.-Y. Chen, Y. Lin, "Development of IGZO TFTs and their applications to next-generation flat-panel displays," J. Inf. Display 11, 160-164 (2010).

H. Oh, S.-M. Yoon, M. K. Ryu, C.-S. Hwang, S. Yang, S.-H. K. Park, "Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor," Appl. Phys. Lett. 97, 183502-183502 (2010).

2009

K. W. Lee, H. S. Shin, K. Y. Heo, K. M. Kim, H. J. Kim, "Light effects of the amorphous indium gallium zinc oxide tin-film transistor," J. Inf. Display 10, 171-174 (2009).

2007

R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Circuits using uniform TFTs based on amorphous In-Ga-Zn-O," J. Soc. Inf. Display 15, 915-921 (2007).

Appl. Phys. Lett.

H. Oh, S.-M. Yoon, M. K. Ryu, C.-S. Hwang, S. Yang, S.-H. K. Park, "Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor," Appl. Phys. Lett. 97, 183502-183502 (2010).

Electron. Lett.

M. W. Oh, H. G. Leem, S. M. Yoon, C. W. Byun, S. H. K. Park, H. S. Oh, K. C. Park, "Charge pump circuit for depletion-mode oxide TFTs," Electron. Lett. 47, 378-380 (2011).

IEEE Electron Device Lett.

J. E. Pi, C. S. Hwang, S. H. Yang, S. H. K. Park, S. M. Yoon, H. K. Leem, Y. K. Kim, J. D. Kim, H. S. Oh, K. C. Park, "A low-power scan driver circuit for oxide TFTs," IEEE Electron Device Lett. 33, 1144-1146 (2012).

B. Kim, S. C. Choi, S.-H. Kuk, Y. H. Jang, K.-S. Park, C.-D. Kim, M.-K. Han, "A novel level shifter employing IGZO TFT," IEEE Electron Device Lett. 32, 167-169 (2011).

J. Inf. Display

K. W. Lee, H. S. Shin, K. Y. Heo, K. M. Kim, H. J. Kim, "Light effects of the amorphous indium gallium zinc oxide tin-film transistor," J. Inf. Display 10, 171-174 (2009).

J. Inf. Display

H.-H. Hsieh, H.-H. Lu, H.-C. Ting, C.-S. Chuang, C.-Y. Chen, Y. Lin, "Development of IGZO TFTs and their applications to next-generation flat-panel displays," J. Inf. Display 11, 160-164 (2010).

M. Mativenga, J. W. Choi, J. H. Hur, H. J. Kim, J. Jang, "Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure," J. Inf. Display 12, 47-50 (2011).

J. Soc. Inf. Display

T. Arai, "Oxide-TFT technologies for next-generation AMOLED display ys," J. Soc. Inf. Display 20, 156-161 (2012).

J. Soc. Inf. Display

R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Circuits using uniform TFTs based on amorphous In-Ga-Zn-O," J. Soc. Inf. Display 15, 915-921 (2007).

S.-H. K. Park, M.-K. Ryu, S.-M. Yoon, S. Yang, C.-S. Hwang, J.-H. Jeon, "Device reliability under electrical stress and photo response of oxide TFTs," J. Soc. Inf. Display 18, 779-788 (2010).

Solid State Electron.

S. Kim, S. Kim, C. Kim, J. C. Park, I. Song, S. Jeon, S.-E. Ahn, J.-S. Park, J.-K. Jeong, "The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors," Solid State Electron. 62, 77-81 (2011).

Other

N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang, J. Park, K. Park, H. Jeong, Y. Ha, Y. Hwang, "Implementation of 240 Hz 55—Inch ultra definition LCD driven by a-IGZO semiconductor TFT with copper signal lines," Soc. Inf. Display 2012 Int. Symp. Dig. Tech. Papers (2012) pp. 784-787.

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