Abstract

Active matrix organic light-emitting diode (AMOLED) displays are fabricated from polycrystalline silicon, which is formed in the single and double (overlap) scanned area during the excimer laser annealing (ELA) process. A redundant pixel line (RPL) design is proposed to remove the overlapping mura and, as a result, a 5-in AMOLED display is successfully fabricated without any non-uniform line image on the overlapping scanned area. This result indicates that the fabrication of a large-sized AMOLED panel is possible using ELA crystallization through an RPL design.

© 2012 IEEE

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  1. G. K. Giust, T. W. Sigmon, "High-performance thin-film transistors fabricated using excimer laser processing and grain engineering," IEEE Trans. Electron Devices 45, 925-932 (1998).
  2. A. Marmorstein, A. T. Voustsas, R. Solanki, "A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films," J. Appl. Phys. 82, 4304-4309 (1997).
  3. A. T. Voustas, A. M. Marmorstein, R. Solanki, "The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors," J. Electrochem. Soc. 146, 3500-3505 (1999).
  4. G. H. Jin, M. J. Kim, "Characteristics of excimer laser-annealed thin-film transistors on the polycrystalline silicon morphology formed in the single and double (overlap) scanned area," Jpn. J. Appl. Phys. 49, 041301-041306 (2010).
  5. H. Watanabe, H. Miki, S. Sugai, K. Kawasaki, T. Kioka, "Crystallization process of polycrystalline silicon by KrF excimer laser annealing," Jpn. J. Appl. Phys. 339, 4491-4498 (1994).
  6. R. B. Iverson, R. Reif, "Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO$_{2}$," J. Appl. Phys. 57, 5169-5173 (1985).
  7. N. Lifshitz, S. Luryi, "Dependence of the off-state current in polycrystalline silicon thin film on electric field in the channel," Appl. Phys. Lett. 64, 2114-2116 (1994).
  8. M. J. Kim, G. H. Jin, "ITO/AINdN/Al contact process for active matrix OLED displays," Electron. Lett. 45, 421-423 (2009).
  9. D. U. Jin, J. K. Jeong, T. W. Kim, J. S. Lee, T. K. Ahn, Y. K. Mo, H. K. Chung, "Flexible AMOLED displays on stainless-steel foil," J. Soc. Inf. Display 14, 1083-1090 (2006).

2010 (1)

G. H. Jin, M. J. Kim, "Characteristics of excimer laser-annealed thin-film transistors on the polycrystalline silicon morphology formed in the single and double (overlap) scanned area," Jpn. J. Appl. Phys. 49, 041301-041306 (2010).

2009 (1)

M. J. Kim, G. H. Jin, "ITO/AINdN/Al contact process for active matrix OLED displays," Electron. Lett. 45, 421-423 (2009).

2006 (1)

D. U. Jin, J. K. Jeong, T. W. Kim, J. S. Lee, T. K. Ahn, Y. K. Mo, H. K. Chung, "Flexible AMOLED displays on stainless-steel foil," J. Soc. Inf. Display 14, 1083-1090 (2006).

1999 (1)

A. T. Voustas, A. M. Marmorstein, R. Solanki, "The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors," J. Electrochem. Soc. 146, 3500-3505 (1999).

1998 (1)

G. K. Giust, T. W. Sigmon, "High-performance thin-film transistors fabricated using excimer laser processing and grain engineering," IEEE Trans. Electron Devices 45, 925-932 (1998).

1997 (1)

A. Marmorstein, A. T. Voustsas, R. Solanki, "A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films," J. Appl. Phys. 82, 4304-4309 (1997).

1994 (2)

H. Watanabe, H. Miki, S. Sugai, K. Kawasaki, T. Kioka, "Crystallization process of polycrystalline silicon by KrF excimer laser annealing," Jpn. J. Appl. Phys. 339, 4491-4498 (1994).

N. Lifshitz, S. Luryi, "Dependence of the off-state current in polycrystalline silicon thin film on electric field in the channel," Appl. Phys. Lett. 64, 2114-2116 (1994).

1985 (1)

R. B. Iverson, R. Reif, "Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO$_{2}$," J. Appl. Phys. 57, 5169-5173 (1985).

Appl. Phys. Lett. (1)

N. Lifshitz, S. Luryi, "Dependence of the off-state current in polycrystalline silicon thin film on electric field in the channel," Appl. Phys. Lett. 64, 2114-2116 (1994).

Electron. Lett. (1)

M. J. Kim, G. H. Jin, "ITO/AINdN/Al contact process for active matrix OLED displays," Electron. Lett. 45, 421-423 (2009).

IEEE Trans. Electron Devices (1)

G. K. Giust, T. W. Sigmon, "High-performance thin-film transistors fabricated using excimer laser processing and grain engineering," IEEE Trans. Electron Devices 45, 925-932 (1998).

J. Appl. Phys. (1)

R. B. Iverson, R. Reif, "Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO$_{2}$," J. Appl. Phys. 57, 5169-5173 (1985).

J. Appl. Phys. (1)

A. Marmorstein, A. T. Voustsas, R. Solanki, "A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films," J. Appl. Phys. 82, 4304-4309 (1997).

J. Electrochem. Soc. (1)

A. T. Voustas, A. M. Marmorstein, R. Solanki, "The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors," J. Electrochem. Soc. 146, 3500-3505 (1999).

J. Soc. Inf. Display (1)

D. U. Jin, J. K. Jeong, T. W. Kim, J. S. Lee, T. K. Ahn, Y. K. Mo, H. K. Chung, "Flexible AMOLED displays on stainless-steel foil," J. Soc. Inf. Display 14, 1083-1090 (2006).

Jpn. J. Appl. Phys. (2)

G. H. Jin, M. J. Kim, "Characteristics of excimer laser-annealed thin-film transistors on the polycrystalline silicon morphology formed in the single and double (overlap) scanned area," Jpn. J. Appl. Phys. 49, 041301-041306 (2010).

H. Watanabe, H. Miki, S. Sugai, K. Kawasaki, T. Kioka, "Crystallization process of polycrystalline silicon by KrF excimer laser annealing," Jpn. J. Appl. Phys. 339, 4491-4498 (1994).

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