Abstract

In this paper, the gate oxide thickness, and the channel length and width of low-temperature poly-Si thin-film transistors (LTPS-TFTs) have been comprehensively studied. The scaling down of gate oxide thickness from 50 to 20 nm significantly improves the subthreshold swing (S.S.) of LTPS-TFTs from 1.797 V/decade to 0.780 V/decade and the threshold voltage V<sub>TH</sub> from 10.87 V to 5.00 V. Moreover, the threshold voltage V<sub>TH</sub> roll-off is also improved with the scaling down of gate oxide thickness due to gate capacitance density enhancement. The channel length scaling down also shows significant subthreshold swing S.S. improvement due to a decreasing of the channel grain boundary trap density N<sub>t</sub>. However, the scaling down of channel length also increases the series resistance effect, resulting in the degradation of the field-effect mobility μ<sub>FE</sub>. Therefore, the channel length dependence of field-effect mobility μ<sub>FE</sub> is slightly different with different channel width due to the competition of channel grain boundary trap density effect and series resistance effect.

© 2011 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription