Abstract
In this paper, we report a general and low-cost process to fabricate high mobility
metal–oxide semiconductors that is suitable for thin-film electronics. This process
use simple metal halide precursors dissolved in an organic solvent and is capable of forming
uniform and continuous thin films via inkjet-printing or spin-coating process. This process
has been demonstrated to deposit a variety of semiconducting metal oxides include binary
oxides (ZnO, In<sub>2</sub>O<sub>3</sub>, SnO<sub>2</sub>, Ga<sub>2</sub>O<sub>3</sub>), ternary oxides (ZIO, ITO, ZTO, IGO) and quaternary compounds (IZTO, IGZO).
Functional thin film transistors with high field-effect mobility were fabricated successfully
using channel layers deposited from this process. This synthetic pathway opens an avenue to
form patterned metal oxide semiconductors through a simple and low-cost process and to
fabricate high performance transparent thin film electronics via digital fabrication processes
on large substrates.
© 2009 IEEE
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