Abstract

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

© 2009 IEEE

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  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  2. H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport and device application," J. Non-Crystal. Solids 352, 851-858 (2006).
  3. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, H. Hosono, "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor InGaZnO: Experiment and ab initio calculations," Phys. Rev. B 75, 035212 (2007).
  4. P. C. Taylor, "The localization of electrons in amorphous semiconductors: A twenty-first century perspective," J. Non-Cryst. Solids 352, 839-850 (2006).
  5. A. Suresh, P. Wellenius, A. Dhawan, J. Muth, "Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. 90, 123512 (2007).
  6. R. E. I. Schropp, B. Stannowski, J. K. Rath, "New challenges in thin film transistor (TFT) research," J. Non-Cryst. Solids 299, 1304-1310 (2002).
  7. H. Klauk, D. J. Gundlach, J. A. Nichols, T. N. Jackson, "Pentacene organic thin-film transistors for circuit and display applications," IEEE Trans. Electron Devices 46, 1258-1263 (1999).
  8. P. Wellenius, A. Suresh, J. F. Muth, "Bright, low voltage europium doped gallium oxide thin film electroluminescent devices," Appl. Phys. Lett 92, 021111 (2008).
  9. A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).
  10. P. D. Rack, P. H. Holloway, "The structure, device physics, and material properties of thin film electroluminescent displays," Mat. Sci. Eng R21(1998), 171-219 (1997).
  11. P. Gollakota, A. Dhawan, P. Wellenius, Y. N. Saripalli, H. Y. Peng, H. O. Everitt, L. M. Lunardi, J. F. Muth, "Optical characterization of Eu-doped gallium oxide," Appl. Phys. Lett. 88, 221906 (2006).
  12. T. Miyata, T. Nakatani, T. Minami, "Gallium oxide as a host material for multicolor emitting phosphors," J. Lumin 87, 1183-1185 (2000).
  13. J. Heikenfeld, M. Garter, D. S. lee, R. Birkahn, A. J. Steckl, "Red light emission by photoluminescence and electroluminescence from Eu-doped GaN," Appl. Phys. Lett. 75, 1189-1191 (1999).
  14. J. H. Kim, P. H. Holloway, "Near-infrared-electroluminescent light-emitting planar optical sources based on gallium nitride doped with rare earths," Adv. Mater. 17, 91-96 (2005).
  15. A. J. Kenyon, "Recent developments in rare-earth doped materials for optoelectronics," Progress in Quantum Electronics 26, 225-284 (2002).
  16. T. Ostereich, C. Swiatowski, I. Broser, Appl. Phys. Lett. 56, 446 (1990).
  17. L. H. Sloof, A. van Blaarderen, A. Polman, G. A. Hebbink, S. I. Klink, F. C. J. M. Van Veggel, D. N. Reinhouldt, J. W. Hofstraat, J. Appl. Phys. 91, 3955 (2002).
  18. P. Wellenius, A. Suresh, J. F. Muth, "An amorphous IGZO rare earth doped luminescent phosphor," Mater. Res. Soc. Sump. Proc. 1111, 1111-D08-03 (2009).
  19. T. Unagami, "EL characteristics of a TFEL/TFT stacked structure display device drive by a Hv-Si TFT circuit," IEEE Trans. on Electron Devices 47, 1694-1699 (2000).
  20. R. L. Hoffman, "ZnO-channel thin-film transistors: Channel mobility," J. Appl. Phys. 95, 5813-5819 (2004).

2009 (1)

P. Wellenius, A. Suresh, J. F. Muth, "An amorphous IGZO rare earth doped luminescent phosphor," Mater. Res. Soc. Sump. Proc. 1111, 1111-D08-03 (2009).

2008 (2)

P. Wellenius, A. Suresh, J. F. Muth, "Bright, low voltage europium doped gallium oxide thin film electroluminescent devices," Appl. Phys. Lett 92, 021111 (2008).

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

2007 (2)

A. Suresh, P. Wellenius, A. Dhawan, J. Muth, "Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. 90, 123512 (2007).

K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, H. Hosono, "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor InGaZnO: Experiment and ab initio calculations," Phys. Rev. B 75, 035212 (2007).

2006 (3)

P. C. Taylor, "The localization of electrons in amorphous semiconductors: A twenty-first century perspective," J. Non-Cryst. Solids 352, 839-850 (2006).

H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport and device application," J. Non-Crystal. Solids 352, 851-858 (2006).

P. Gollakota, A. Dhawan, P. Wellenius, Y. N. Saripalli, H. Y. Peng, H. O. Everitt, L. M. Lunardi, J. F. Muth, "Optical characterization of Eu-doped gallium oxide," Appl. Phys. Lett. 88, 221906 (2006).

2005 (1)

J. H. Kim, P. H. Holloway, "Near-infrared-electroluminescent light-emitting planar optical sources based on gallium nitride doped with rare earths," Adv. Mater. 17, 91-96 (2005).

2004 (2)

R. L. Hoffman, "ZnO-channel thin-film transistors: Channel mobility," J. Appl. Phys. 95, 5813-5819 (2004).

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

2002 (3)

R. E. I. Schropp, B. Stannowski, J. K. Rath, "New challenges in thin film transistor (TFT) research," J. Non-Cryst. Solids 299, 1304-1310 (2002).

L. H. Sloof, A. van Blaarderen, A. Polman, G. A. Hebbink, S. I. Klink, F. C. J. M. Van Veggel, D. N. Reinhouldt, J. W. Hofstraat, J. Appl. Phys. 91, 3955 (2002).

A. J. Kenyon, "Recent developments in rare-earth doped materials for optoelectronics," Progress in Quantum Electronics 26, 225-284 (2002).

2000 (2)

T. Miyata, T. Nakatani, T. Minami, "Gallium oxide as a host material for multicolor emitting phosphors," J. Lumin 87, 1183-1185 (2000).

T. Unagami, "EL characteristics of a TFEL/TFT stacked structure display device drive by a Hv-Si TFT circuit," IEEE Trans. on Electron Devices 47, 1694-1699 (2000).

1999 (2)

J. Heikenfeld, M. Garter, D. S. lee, R. Birkahn, A. J. Steckl, "Red light emission by photoluminescence and electroluminescence from Eu-doped GaN," Appl. Phys. Lett. 75, 1189-1191 (1999).

H. Klauk, D. J. Gundlach, J. A. Nichols, T. N. Jackson, "Pentacene organic thin-film transistors for circuit and display applications," IEEE Trans. Electron Devices 46, 1258-1263 (1999).

1997 (1)

P. D. Rack, P. H. Holloway, "The structure, device physics, and material properties of thin film electroluminescent displays," Mat. Sci. Eng R21(1998), 171-219 (1997).

1990 (1)

T. Ostereich, C. Swiatowski, I. Broser, Appl. Phys. Lett. 56, 446 (1990).

Adv. Mater. (1)

J. H. Kim, P. H. Holloway, "Near-infrared-electroluminescent light-emitting planar optical sources based on gallium nitride doped with rare earths," Adv. Mater. 17, 91-96 (2005).

Appl. Phys. Lett (1)

P. Wellenius, A. Suresh, J. F. Muth, "Bright, low voltage europium doped gallium oxide thin film electroluminescent devices," Appl. Phys. Lett 92, 021111 (2008).

Appl. Phys. Lett. (4)

A. Suresh, P. Wellenius, A. Dhawan, J. Muth, "Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett. 90, 123512 (2007).

T. Ostereich, C. Swiatowski, I. Broser, Appl. Phys. Lett. 56, 446 (1990).

P. Gollakota, A. Dhawan, P. Wellenius, Y. N. Saripalli, H. Y. Peng, H. O. Everitt, L. M. Lunardi, J. F. Muth, "Optical characterization of Eu-doped gallium oxide," Appl. Phys. Lett. 88, 221906 (2006).

J. Heikenfeld, M. Garter, D. S. lee, R. Birkahn, A. J. Steckl, "Red light emission by photoluminescence and electroluminescence from Eu-doped GaN," Appl. Phys. Lett. 75, 1189-1191 (1999).

IEEE Trans. Electron Devices (1)

H. Klauk, D. J. Gundlach, J. A. Nichols, T. N. Jackson, "Pentacene organic thin-film transistors for circuit and display applications," IEEE Trans. Electron Devices 46, 1258-1263 (1999).

IEEE Trans. on Electron Devices (1)

T. Unagami, "EL characteristics of a TFEL/TFT stacked structure display device drive by a Hv-Si TFT circuit," IEEE Trans. on Electron Devices 47, 1694-1699 (2000).

J. Appl. Phys. (2)

R. L. Hoffman, "ZnO-channel thin-film transistors: Channel mobility," J. Appl. Phys. 95, 5813-5819 (2004).

L. H. Sloof, A. van Blaarderen, A. Polman, G. A. Hebbink, S. I. Klink, F. C. J. M. Van Veggel, D. N. Reinhouldt, J. W. Hofstraat, J. Appl. Phys. 91, 3955 (2002).

J. Lumin (1)

T. Miyata, T. Nakatani, T. Minami, "Gallium oxide as a host material for multicolor emitting phosphors," J. Lumin 87, 1183-1185 (2000).

J. Non-Cryst. Solids (2)

R. E. I. Schropp, B. Stannowski, J. K. Rath, "New challenges in thin film transistor (TFT) research," J. Non-Cryst. Solids 299, 1304-1310 (2002).

P. C. Taylor, "The localization of electrons in amorphous semiconductors: A twenty-first century perspective," J. Non-Cryst. Solids 352, 839-850 (2006).

J. Non-Crystal. Solids (1)

H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport and device application," J. Non-Crystal. Solids 352, 851-858 (2006).

Mat. Sci. Eng (1)

P. D. Rack, P. H. Holloway, "The structure, device physics, and material properties of thin film electroluminescent displays," Mat. Sci. Eng R21(1998), 171-219 (1997).

Mater. Res. Soc. Sump. Proc. (1)

P. Wellenius, A. Suresh, J. F. Muth, "An amorphous IGZO rare earth doped luminescent phosphor," Mater. Res. Soc. Sump. Proc. 1111, 1111-D08-03 (2009).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Phys. Rev. B (1)

K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, H. Hosono, "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor InGaZnO: Experiment and ab initio calculations," Phys. Rev. B 75, 035212 (2007).

Progress in Quantum Electronics (1)

A. J. Kenyon, "Recent developments in rare-earth doped materials for optoelectronics," Progress in Quantum Electronics 26, 225-284 (2002).

Thin Solid Films (1)

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, J. F. Muth, "Transparent high mobility InGaZnO thin films deposited by PLD," Thin Solid Films 516, 1326-1329 (2008).

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