Abstract
Polycrystalline silicon (poly-Si) films consisting of dish-like and
wadding-like domains were obtained with solution-based metal-induced crystallization
(SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher
in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs)
have been prepared using those two kinds of poly-Si films as the active layer,
followed by the phosphosilicate glass (PSG) nickel gettering. The field effect
mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70 ~ 80 cm<sup>2</sup>/V · s and 40 ~ 50 cm<sup>2</sup>/V · s, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the
gate-induced drain leakage current (GIDL) and uniformity of the drain current
distribution were also improved. P-type TFTs fabricated using SMIC exhibited
excellent reliability.
© 2006 IEEE
PDF Article
More Like This
Partially light-controlled imaging system based on High Temperature Poly-Silicon Thin Film Transistor-Liquid Crystal Display
Yuanhe Tang, Ruixia Zhang, Haiyang Gao, Kai Liu, Gaoxiang Zhao, Xusan Yang, Qing Li, Yuan Liang, Na Ye, Hanchen Liu, and Shulin Liu
Opt. Express 18(10) 10616-10626 (2010)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription