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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 12,
  • Issue 4,
  • pp. 328-337
  • (2016)

Correlation Between Carrier Concentration Distribution, I–V and C–V Characteristics of a-InGaZnO TFTs

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Abstract

In this work, a technology computer-aided design (TCAD) device model based on an fabricated amorphous InGaZnO thin-film transistor (a-IGZO TFT) was established to study the correlation between carrier concentration distribution, current–voltage (I–V) and capacitance–voltage (C–V) characteristics of a-IGZO TFTs. The equilibrium carrier concentration of the a-IGZO layer influenced by defect states, interface fixed charges, gate and S/D electrodes were studied systematically and quantitatively. The a-IGZO thickness was varied from 10 nm to 140 nm. The doping concentration in the bulk a-IGZO layer and source/drain (S/D) contact regions were changed from ${{10}}^{10}~{{cm}}^{-3}$ to ${{10}}^{20}~{{cm}}^{-3}$ . The physical mechanisms underlying the I–V and C–V variation caused by above-mentioned parameters were explored by analyzing the energy band diagram and carrier concentration distribution in the a-IGZO layer. The total number of electrons in the channel region of the TFT was calculated by numeric integration for further investigation of its correlation with the a-IGZO thickness, I–V, and C–V characteristics of the a-IGZO TFTs.

© 2015 IEEE

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