Abstract
Amorphous indium gallium zinc oxide thin-film transistors have
attracted growing interest due to its low energy consumption, possibility
of low temperature fabrication and transparency. However, it still
has technological problems on reliability and hump due to hydrogen
related materials. To solve these problems, we made siloxane passivation
layer with less OH bond using spin coating technique and carried out
the bias stress testing. TFTs passivated by less OH siloxane show
excellent reliability compared with high OH bond condition which showed
large hump effect on each tests of positive bias stress and negative
bias stress. We achieved the stable device using an organic-inorganic
hybrid material by controlling OH bond, and we found that the amount
of OH in the passivation layer is a key issue in oxide TFTs reliability.
© 2015 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription