Abstract
New generation of thin-film transistors (TFTs), where the active
material is amorphous oxide, conjugated polymer, or small molecules,
have the advantage of flexibility, high form factor, and large scale
manufacturability through low cost processing techniques, e.g., roll-to-roll
printing, screen printing. During high-throughput production using
these techniques, the probability of defects being present increases
with the speed of manufacturing and area of devices. Therefore a high-throughput
and low cost testing technique is absolute essential to maintain high
quality of final product. We report a Simultaneous Multiple Device
Testing (SMuDT) approach which is up to 10 times faster and cost effective
than conventional testing methods. The SMuDT approach was validated
using circuit simulation and demonstrated by testing large scale indium
gallium zinc oxide (IGZO) TFTs. A method to ‘bin’ the
tested devices using Figure of Merit was established.
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