Abstract

We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 ${{cm}}^{2}\cdot {{V}} ^{-1} \cdot{{s}} ^{-1}$ with respect to 0.08 ${{cm}}^{2} \cdot{{V}} ^{-1} \cdot{{s}} ^{-1}$ without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.

© 2015 OAPA

PDF Article

References

  • View by:
  • |
  • |

  1. S. Walther, "Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles," Microelectron. Eng. 87, 2312-2316 (2010).
  2. S. Walther, S. Polster, B. Meyer, M. P. M. Jank, H. Ryssel, L. Frey, "Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors," J. Vac. Sci. Technol., B 29, 01A601-1-6 (2011).
  3. K. Okamura, N. Mechau, D. Nikolova, H. Hahn, "Influence of interface roughness on the performance of nanoparticulate oxide field-effect transistors," J. Appl. Phys. 93, 083105-1-3 (2008).
  4. B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).
  5. Y.-J. Kwack, Y.-S. Choi, "Screen-printed source-drain electrodes for a solution-processed zinc-tin-oxide thin-film transistor," J. Kor. Phys. Soc. 56, 3410-3414 (2011).
  6. E. Fortunato, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).
  7. J.-H. Lim, S.-J. Park, Zinc Oxide Bulk, Thin films and Nanostructures : Processing, Properties, and Applications (Elsevier Science, 2006) pp. 267-283.
  8. C.-C. Ho, L.-W. Lai, C.-T. Lee, K.-C. Yang, B.-T. Lai, D.-S. Liu, "Transparent cosputtered ITO–ZnO electrode ohmic contact to n-type ZnO for ZnO/GaN heterojunction light-emitting diode," J. Phys. D: Appl. Phys. 46, 315102-1-7 (2013).
  9. M. Baum, S. Polster, M. P. M. Jank, I. Alexeev, L. Frey, M. Schmidt, "Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget," Appl. Phys. A. 107, 269-273 (2012).
  10. N. Kölpin, M. Wegener, E. Teuber, S. Polster, L. Frey, A. Roosen, "Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices," J. Mater Sci 48, 1623-1631 (2013).
  11. D. Schroder, Semiconductor Material and Device Characterization (Wiley, 2006) pp. 127-184.
  12. Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra, G. Ghibaudo, "Modified transmission-line method for contact resistance extraction in organic field-effect transistors," Appl. Phys. Lett. 97, 063302-1-3 (2010).
  13. X. Liu, "Reduction in contact resistance of ZnO thin-film transistors by insertion of an indium tin oxide interlayer," ITC 2015 Abstracts (2015) pp. 69-70.
  14. M. Baum, I. Alexeev, M. Schmidt, "Laser treatment of ITO and ZnO nanoparticles for the production of thin conducting layers on transparent substrates," J. Laser Micro/Nanoeng. 6, 191-194 (2011).
  15. L. Brillson, Y. Lu, "ZnO Schottky barriers and ohmic contacts," J. Appl. Phys. 109, 121301-1-33 (2011).
  16. J.-H. Bae, W.-H. Kim, C.-. J. Yu, S.-D. Lee, "Reduction in contact resistance of pentacene thin-film transistors by formation of an organo-metal hybrid interlayer," Jpn. J. Appl. Phys. 48, 020209-1-3 (2009).

2013 (2)

C.-C. Ho, L.-W. Lai, C.-T. Lee, K.-C. Yang, B.-T. Lai, D.-S. Liu, "Transparent cosputtered ITO–ZnO electrode ohmic contact to n-type ZnO for ZnO/GaN heterojunction light-emitting diode," J. Phys. D: Appl. Phys. 46, 315102-1-7 (2013).

N. Kölpin, M. Wegener, E. Teuber, S. Polster, L. Frey, A. Roosen, "Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices," J. Mater Sci 48, 1623-1631 (2013).

2012 (2)

M. Baum, S. Polster, M. P. M. Jank, I. Alexeev, L. Frey, M. Schmidt, "Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget," Appl. Phys. A. 107, 269-273 (2012).

E. Fortunato, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

2011 (4)

M. Baum, I. Alexeev, M. Schmidt, "Laser treatment of ITO and ZnO nanoparticles for the production of thin conducting layers on transparent substrates," J. Laser Micro/Nanoeng. 6, 191-194 (2011).

L. Brillson, Y. Lu, "ZnO Schottky barriers and ohmic contacts," J. Appl. Phys. 109, 121301-1-33 (2011).

S. Walther, S. Polster, B. Meyer, M. P. M. Jank, H. Ryssel, L. Frey, "Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors," J. Vac. Sci. Technol., B 29, 01A601-1-6 (2011).

Y.-J. Kwack, Y.-S. Choi, "Screen-printed source-drain electrodes for a solution-processed zinc-tin-oxide thin-film transistor," J. Kor. Phys. Soc. 56, 3410-3414 (2011).

2010 (2)

S. Walther, "Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles," Microelectron. Eng. 87, 2312-2316 (2010).

Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra, G. Ghibaudo, "Modified transmission-line method for contact resistance extraction in organic field-effect transistors," Appl. Phys. Lett. 97, 063302-1-3 (2010).

2009 (1)

J.-H. Bae, W.-H. Kim, C.-. J. Yu, S.-D. Lee, "Reduction in contact resistance of pentacene thin-film transistors by formation of an organo-metal hybrid interlayer," Jpn. J. Appl. Phys. 48, 020209-1-3 (2009).

2008 (1)

K. Okamura, N. Mechau, D. Nikolova, H. Hahn, "Influence of interface roughness on the performance of nanoparticulate oxide field-effect transistors," J. Appl. Phys. 93, 083105-1-3 (2008).

2005 (1)

B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).

Adv. Mater. (1)

E. Fortunato, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

Appl. Phys. A. (1)

M. Baum, S. Polster, M. P. M. Jank, I. Alexeev, L. Frey, M. Schmidt, "Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget," Appl. Phys. A. 107, 269-273 (2012).

Appl. Phys. Lett. (1)

Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra, G. Ghibaudo, "Modified transmission-line method for contact resistance extraction in organic field-effect transistors," Appl. Phys. Lett. 97, 063302-1-3 (2010).

J. Appl. Phys. (2)

L. Brillson, Y. Lu, "ZnO Schottky barriers and ohmic contacts," J. Appl. Phys. 109, 121301-1-33 (2011).

K. Okamura, N. Mechau, D. Nikolova, H. Hahn, "Influence of interface roughness on the performance of nanoparticulate oxide field-effect transistors," J. Appl. Phys. 93, 083105-1-3 (2008).

J. Kor. Phys. Soc. (1)

Y.-J. Kwack, Y.-S. Choi, "Screen-printed source-drain electrodes for a solution-processed zinc-tin-oxide thin-film transistor," J. Kor. Phys. Soc. 56, 3410-3414 (2011).

J. Laser Micro/Nanoeng. (1)

M. Baum, I. Alexeev, M. Schmidt, "Laser treatment of ITO and ZnO nanoparticles for the production of thin conducting layers on transparent substrates," J. Laser Micro/Nanoeng. 6, 191-194 (2011).

J. Mater Sci (1)

N. Kölpin, M. Wegener, E. Teuber, S. Polster, L. Frey, A. Roosen, "Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices," J. Mater Sci 48, 1623-1631 (2013).

J. Phys. D: Appl. Phys. (1)

C.-C. Ho, L.-W. Lai, C.-T. Lee, K.-C. Yang, B.-T. Lai, D.-S. Liu, "Transparent cosputtered ITO–ZnO electrode ohmic contact to n-type ZnO for ZnO/GaN heterojunction light-emitting diode," J. Phys. D: Appl. Phys. 46, 315102-1-7 (2013).

J. Vac. Sci. Technol., B (1)

S. Walther, S. Polster, B. Meyer, M. P. M. Jank, H. Ryssel, L. Frey, "Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors," J. Vac. Sci. Technol., B 29, 01A601-1-6 (2011).

Jpn. J. Appl. Phys. (1)

J.-H. Bae, W.-H. Kim, C.-. J. Yu, S.-D. Lee, "Reduction in contact resistance of pentacene thin-film transistors by formation of an organo-metal hybrid interlayer," Jpn. J. Appl. Phys. 48, 020209-1-3 (2009).

Microelectron. Eng. (1)

S. Walther, "Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles," Microelectron. Eng. 87, 2312-2316 (2010).

Nano Lett. (1)

B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).

Other (3)

J.-H. Lim, S.-J. Park, Zinc Oxide Bulk, Thin films and Nanostructures : Processing, Properties, and Applications (Elsevier Science, 2006) pp. 267-283.

D. Schroder, Semiconductor Material and Device Characterization (Wiley, 2006) pp. 127-184.

X. Liu, "Reduction in contact resistance of ZnO thin-film transistors by insertion of an indium tin oxide interlayer," ITC 2015 Abstracts (2015) pp. 69-70.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.