Abstract
We propose a simple shifted laser stealth dicing (shifted-LSD)
method to enhance output power of GaN-based blue light-emitting diodes
(LEDs). Compared with the conventional method with only one nanosecond
laser scribing from the front side, we performed two additional picosecond
laser scribing on different positions of the backside surface. It
was found that we could effectively enhance the LED output power from
132.14 to 139.11 mW using the shifted-LSD without degrading the electrical
properties of the devices. It was also found such enhancement should
be attributed to the enhanced LEE from the roughened sapphire substrate.
© 2015 IEEE
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